Decade bandwidth high efficiency GaN HEMT power amplifier designed with resistive harmonic loading
Paper i proceeding, 2012

The use of resistive loading at higher harmonics in wideband power amplifier design is proposed. Although the theoretical efficiency of such operation is lower than other classes the significantly simplified load network design potentially allows for multi-octave realizations. A decade bandwidth (0.4-4.1 GHz) GaN HEMT power amplifier was thereby designed, delivering more than 40 dBm output power with 10-15 dB gain and 40-62% drain efficiency. Linearized modulated signal amplification was then successfully demonstrated at multiple frequencies (0.9 to 3.5 GHz), using various downlink signals (LTE, WCDMA, WiMAX), with resulting ACLR lower than 46 dBc.

Broadband amplifiers

Power amplifiers

Wideband

Gallium nitride

Författare

Christer Andersson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

J. Moon

Pohang University of Science and Technology

Christian Fager

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

B. Kim

Pohang University of Science and Technology

Niklas Rorsman

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

IEEE MTT-S International Microwave Symposium Digest

0149645X (ISSN)

6258274

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1109/MWSYM.2012.6258274

ISBN

978-146731087-1

Mer information

Skapat

2017-10-07