Carrier Mobility as a Function of Temperature in as-Grown and H-intercalated Epitaxial Graphenes on 4H-SiC
Paper i proceeding, 2014

The carrier velocity is measured as a function of electric field in as-grown and H-intercalaed epitaxial graphene grown on semi-insulating 4H-SiC in order to estimate the low field carrier mobility as a function of temperature. The mobility is also measured on the same samples as a function of temperature in a liquid Helium (He) cooled cryostat. The two temperature dependent measurements are compared in order to deduce the dominant carrier scattering mechanisms in both materials. In as-grown material, acoustic phonon scattering and impurity scattering both contribute, while impurity scattering dominates in H-intercalated material.

carrier density

mobility

electron transport

scattering

SiC

epitaxial growth

Graphene

Författare

Michael Winters

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

E. B. Thorsteinsson

E. O. Sveinbjornsson

H. P. Gislason

J. Hassan

E. Janzen

Niklas Rorsman

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Materials Science Forum

0255-5476 (ISSN)

Vol. 778-780 1146-1149

Ämneskategorier

Annan elektroteknik och elektronik

DOI

10.4028/www.scientific.net/MSF.778-780.1146