Developing Graphene based MMICs on SiC substrate
Paper i proceeding, 2016

This paper presents the fabrication process development of monolithic microwave integrated circuits (MMICs) based on graphene field effect transistors (G-FETs). In this process, the G-FETs are based on epitaxial graphene on SiC substrate. Base on this process, a wide-band amplifier (0-3GHz) with 6-7 dB gain is realized.

Författare

Omid Habibpour

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

Niklas Rorsman

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

2015 Asia-Pacific Microwave Conference (Apmc), Vols 1-3

7411745

Ämneskategorier

Telekommunikation

DOI

10.1109/APMC.2015.7411745

Mer information

Senast uppdaterat

2020-03-02