Developing Graphene based MMICs on SiC substrate
Paper i proceeding, 2015

This paper presents the fabrication process development of monolithic microwave integrated circuits (MMICs) based on graphene field effect transistors (G-FETs). In this process, the G-FETs are based on epitaxial graphene on SiC substrate. Base on this process, a wide-band amplifier (0-3GHz) with 6-7 dB gain is realized.

Författare

Omid Habibpour

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Niklas Rorsman

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

2015 Asia-Pacific Microwave Conference (Apmc), Vols 1-3

7411745

Ämneskategorier

Telekommunikation

DOI

10.1109/APMC.2015.7411745

ISBN

978-1-4799-8767-2

Mer information

Skapat

2017-10-07