Developing Graphene based MMICs on SiC substrate
Paper in proceedings, 2016

This paper presents the fabrication process development of monolithic microwave integrated circuits (MMICs) based on graphene field effect transistors (G-FETs). In this process, the G-FETs are based on epitaxial graphene on SiC substrate. Base on this process, a wide-band amplifier (0-3GHz) with 6-7 dB gain is realized.

Author

Omid Habibpour

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Niklas Rorsman

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Herbert Zirath

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

2015 Asia-Pacific Microwave Conference (Apmc), Vols 1-3

7411745

Subject Categories

Telecommunications

DOI

10.1109/APMC.2015.7411745

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