Investigation of Multiple-Mesa-Nanochannel Array GaN-Based MOSHEMTs with Al2O3 Gate Dielectric Layer
Artikel i vetenskaplig tidskrift, 2021

In this work, an atomic layer deposition system was used to deposit Al2O3 high-k dielectric film as the gate insulator of GaN-based metal-oxide-semiconductor high-electron mobility transistors (MOSHEMTs). By using the Al2O3 gate dielectric layer, compared to planar channel structure, the direct current, high frequency, and flicker noise performances were improved in the GaN-based MOSHEMTs with fin-nanochannel array. For the GaN-based 80-nm-wide fin-nanochannel array MOSHEMTs, they exhibited superior performances of maximum extrinsic transconductance of 239 mS mm(-1), threshold voltage of -0.4 V, unit gain cutoff frequency of 7.3 GHz, maximum oscillation frequency of 14.1 GHz, normalized noise power of 2.5 x 10(-14) Hz(-1), and Hooge's coefficient of 1.4 x 10(-6). The enhanced performances were attributed to the features of fin-nanochannel array of better gate control capability, enhanced pinch-off effect, and better heat dissipation driven by lateral heat flow within the space between fin-channels.

electron-beam lithography system

GaN-based MOSHEMTs

fin-nanochannel array

photoelectrochemical etching method

Al2O3 high-k gate dielectric layer

Författare

Jhang-Jie Jian

National Cheng Kung University

Hsin-Ying Lee

National Cheng Kung University

Edward Yi Chang

National Yang Ming Chiao Tung University

Niklas Rorsman

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Ching-Ting Lee

Yuan Ze University

National Cheng Kung University

ECS Journal of Solid State Science and Technology

2162-8769 (ISSN) 2162-8777 (eISSN)

Vol. 10 5 055017

Ämneskategorier

Energiteknik

Signalbehandling

Annan elektroteknik och elektronik

DOI

10.1149/2162-8777/ac029f

Mer information

Senast uppdaterat

2021-06-21