A W-band MMIC Resistive Mixer Based on Epitaxial Graphene FET
Artikel i vetenskaplig tidskrift, 2017
This letter presents the design, fabrication and characterization of the first graphene based monolithic microwave integrated circuit (MMIC) in microstrip technology operating in W-band. The circuit is a resistive mixer in a 250 nm graphene field effect transistor (G-FET) technology on a SiC substrate. A conversion loss of 18 dB is achieved which is limited by the available local oscillator (LO) power. The mixer exhibits a flat response over radio frequency (RF) range of 90-100 GHz. The RF bandwidth is also limited by the measurement setup.
W-band
resistive mixer
Engineering
Epitaxial graphene
graphene FET
MMIC
Författare
Omid Habibpour
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Zhongxia Simon He
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
W. Strupinski
Instytutu Technologii Materialow Elektronicznych w Warszawie
Niklas Rorsman
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Tymoteusz Ciuk
Instytutu Technologii Materialow Elektronicznych w Warszawie
Pawel Ciepielewski
Instytutu Technologii Materialow Elektronicznych w Warszawie
Herbert Zirath
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
IEEE Microwave and Wireless Components Letters
1531-1309 (ISSN) 15581764 (eISSN)
Vol. 27 2 168-170 7836348Ämneskategorier (SSIF 2011)
Nanoteknik
DOI
10.1109/lmwc.2016.2646998