A W-band MMIC Resistive Mixer Based on Epitaxial Graphene FET
Artikel i vetenskaplig tidskrift, 2017

This letter presents the design, fabrication and characterization of the first graphene based monolithic microwave integrated circuit (MMIC) in microstrip technology operating in W-band. The circuit is a resistive mixer in a 250 nm graphene field effect transistor (G-FET) technology on a SiC substrate. A conversion loss of 18 dB is achieved which is limited by the available local oscillator (LO) power. The mixer exhibits a flat response over radio frequency (RF) range of 90-100 GHz. The RF bandwidth is also limited by the measurement setup.

W-band

resistive mixer

Engineering

Epitaxial graphene

graphene FET

MMIC

Författare

Omid Habibpour

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Zhongxia Simon He

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

W. Strupinski

Instytutu Technologii Materialow Elektronicznych w Warszawie

Niklas Rorsman

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Tymoteusz Ciuk

Instytutu Technologii Materialow Elektronicznych w Warszawie

Pawel Ciepielewski

Instytutu Technologii Materialow Elektronicznych w Warszawie

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

IEEE Microwave and Wireless Components Letters

1531-1309 (ISSN)

Vol. 27 168-170

Ämneskategorier

Nanoteknik

DOI

10.1109/lmwc.2016.2646998