A W-band MMIC Resistive Mixer Based on Epitaxial Graphene FET
Journal article, 2017

This letter presents the design, fabrication and characterization of the first graphene based monolithic microwave integrated circuit (MMIC) in microstrip technology operating in W-band. The circuit is a resistive mixer in a 250 nm graphene field effect transistor (G-FET) technology on a SiC substrate. A conversion loss of 18 dB is achieved which is limited by the available local oscillator (LO) power. The mixer exhibits a flat response over radio frequency (RF) range of 90-100 GHz. The RF bandwidth is also limited by the measurement setup.

W-band

resistive mixer

Engineering

Epitaxial graphene

graphene FET

MMIC

Author

Omid Habibpour

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Zhongxia Simon He

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

W. Strupinski

Instytutu Technologii Materialow Elektronicznych w Warszawie

Niklas Rorsman

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Tymoteusz Ciuk

Instytutu Technologii Materialow Elektronicznych w Warszawie

Pawel Ciepielewski

Instytutu Technologii Materialow Elektronicznych w Warszawie

Herbert Zirath

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

IEEE Microwave and Wireless Components Letters

1531-1309 (ISSN)

Vol. 27 2 168-170

Subject Categories

Nano Technology

DOI

10.1109/lmwc.2016.2646998

More information

Created

10/8/2017