Epitaxial and Layout Optimization of SiC Microwave Power Varactors
Paper i proceeding, 2011

SiC Schottky diode varactors have been designed for use in tunable microwave power circuits. Epitaxial growth results show excellent material uniformity with low access layer sheet resistances. Two types of device layouts have been evaluated. Island type layouts reduce the parasitic series resistance by 50-60% compared to typical finger layouts. The Q-factors of downscaled island devices are approaching the intrinsic material performance, but are limited by an increasing parasitic parallel capacitance.

Författare

Christer Andersson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Björn Magnusson

Niklas Henelius

Niklas Rorsman

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Asia-Pacific Microwave Conference Proceedings, APMC (APMC 2011 ;Melbourne, VIC; 5 - 8 December 2011)

1642-1645

Styrkeområden

Informations- och kommunikationsteknik

Drivkrafter

Hållbar utveckling

Ämneskategorier

Elektroteknik och elektronik

Annan elektroteknik och elektronik

ISBN

978-085825974-4

Mer information

Skapat

2017-10-07