Epitaxial and Layout Optimization of SiC Microwave Power Varactors
Paper i proceeding, 2011
SiC Schottky diode varactors have been designed for use in tunable microwave power circuits. Epitaxial growth results show excellent material uniformity with low access layer sheet resistances. Two types of device layouts have been evaluated. Island type layouts reduce the parasitic series resistance by 50-60% compared to typical finger layouts. The Q-factors of downscaled island devices are approaching the intrinsic material performance, but are limited by an increasing parasitic parallel capacitance.
Författare
Christer Andersson
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Björn Magnusson
Niklas Henelius
Niklas Rorsman
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Asia-Pacific Microwave Conference Proceedings, APMC (APMC 2011 ;Melbourne, VIC; 5 - 8 December 2011)
1642-1645
978-085825974-4 (ISBN)
Styrkeområden
Informations- och kommunikationsteknik
Drivkrafter
Hållbar utveckling
Ämneskategorier
Elektroteknik och elektronik
Annan elektroteknik och elektronik
ISBN
978-085825974-4