Epitaxial and Layout Optimization of SiC Microwave Power Varactors
Paper in proceedings, 2011

SiC Schottky diode varactors have been designed for use in tunable microwave power circuits. Epitaxial growth results show excellent material uniformity with low access layer sheet resistances. Two types of device layouts have been evaluated. Island type layouts reduce the parasitic series resistance by 50-60% compared to typical finger layouts. The Q-factors of downscaled island devices are approaching the intrinsic material performance, but are limited by an increasing parasitic parallel capacitance.

Author

Christer Andersson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Björn Magnusson

Niklas Henelius

Niklas Rorsman

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Asia-Pacific Microwave Conference Proceedings, APMC (APMC 2011 ;Melbourne, VIC; 5 - 8 December 2011)

1642-1645

Areas of Advance

Information and Communication Technology

Driving Forces

Sustainable development

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

Other Electrical Engineering, Electronic Engineering, Information Engineering

ISBN

978-085825974-4

More information

Created

10/7/2017