High linearity MMIC power amplifier design with controlled junction temperature
Paper i proceeding, 2014

A combination of techniques for designing high linearity power amplifiers under controlled junction temperature required for space applications is explained and demonstrated. Junction temperature calculation is taken into account in the transistor selection to ensure high reliability operation and is verified by IR measurement. A non linear model is used to accurately predict harmonics generation and intermodulation products. Optimal bias point and loads are chosen to improve the linearity performance. The design method is demonstrated in a C band high linearity GaAs MMIC power. The techniques described lead to an output 1dB compression point of 26.6dBm, saturated power 28.9dBm and PAE 20.9%, with a gain higher than 30dB. The output third order intercept point (OIP3) reaches levels over 40dBm with power consumption less than 2W. The design keeps the critical junction temperature under 108°C and de-rating drain bias of 4 volts is used.

high linearity

modeling

Junction temperature

C-Band

bus-bar combiner

power amplifier

Författare

Oliver Silva Barrera

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Iltcho Angelov

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Niklas Rorsman

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2014

Art. no. 6815096-

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1109/INMMIC.2014.6815096