Low density of near-interface traps at the Al2O3/4H-SiC interface with Al2O3 made by low temperature oxidation of Al
Paper i proceeding, 2017
We report on a very low density (<5×1011 cm-2) of near-interface traps (NITs) at the Al2O3/4H-SiC interface estimated from capacitance-voltage (CV) analysis of MOS capacitors. The aluminum oxide (Al2O3) is grown by repeated deposition and subsequent low temperature (200 °C) oxidation for 5 min of thin (1-2 nm) Al layers using a hot plate. We refer to this simple method as hot plate Al2O3. It is observed that the density of NITs is significantly lower in the hot plate Al2O3 samples than in samples with Al2O3 grown by atomic layer deposition (ALD) at 300 °C and in reference samples with thermally grown silicon dioxide grown in O2 or N2O ambient. © 2017 Trans Tech Publications, Switzerland.
Near-interface traps
Interface states
Aluminum oxide
Gate dielectrics
Författare
Rabia Y. Khosa
Háskóli Íslands
Einar Sveinbjӧrnsson
Háskóli Íslands
Linköpings universitet
Michael Winters
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
J. Hassan
Linköpings universitet
Robin Karhu
Linköpings universitet
Erik Janzén
Linköpings universitet
Niklas Rorsman
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Materials Science Forum
0255-5476 (ISSN) 16629752 (eISSN)
Vol. 897 MSF 135-138978-303571043-4 (ISBN)
Ämneskategorier
Materialteknik
DOI
10.4028/www.scientific.net/MSF.897.135
ISBN
978-303571043-4