Low density of near-interface traps at the Al2O3/4H-SiC interface with Al2O3 made by low temperature oxidation of Al
Paper i proceeding, 2017

We report on a very low density (<5×1011 cm-2) of near-interface traps (NITs) at the Al2O3/4H-SiC interface estimated from capacitance-voltage (CV) analysis of MOS capacitors. The aluminum oxide (Al2O3) is grown by repeated deposition and subsequent low temperature (200 °C) oxidation for 5 min of thin (1-2 nm) Al layers using a hot plate. We refer to this simple method as hot plate Al2O3. It is observed that the density of NITs is significantly lower in the hot plate Al2O3 samples than in samples with Al2O3 grown by atomic layer deposition (ALD) at 300 °C and in reference samples with thermally grown silicon dioxide grown in O2 or N2O ambient. © 2017 Trans Tech Publications, Switzerland.

Gate dielectrics

Aluminum oxide

Near-interface traps

Interface states

Författare

Rabia Y. Khosa

University Science Institute Reykjavik

Einar Sveinbjӧrnsson

Linkopings universitet

University Science Institute Reykjavik

Michael Winters

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

J. Hassan

Linkopings universitet

Robin Karhu

Linkopings universitet

Erik Janzén

Linkopings universitet

Niklas Rorsman

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Materials Science Forum

0255-5476 (ISSN)

Vol. 897 MSF 135-138

Ämneskategorier

Materialteknik

DOI

10.4028/www.scientific.net/MSF.897.135

ISBN

978-303571043-4