Low density of near-interface traps at the Al2O3/4H-SiC interface with Al2O3 made by low temperature oxidation of Al
Paper in proceeding, 2017
We report on a very low density (<5×1011 cm-2) of near-interface traps (NITs) at the Al2O3/4H-SiC interface estimated from capacitance-voltage (CV) analysis of MOS capacitors. The aluminum oxide (Al2O3) is grown by repeated deposition and subsequent low temperature (200 °C) oxidation for 5 min of thin (1-2 nm) Al layers using a hot plate. We refer to this simple method as hot plate Al2O3. It is observed that the density of NITs is significantly lower in the hot plate Al2O3 samples than in samples with Al2O3 grown by atomic layer deposition (ALD) at 300 °C and in reference samples with thermally grown silicon dioxide grown in O2 or N2O ambient. © 2017 Trans Tech Publications, Switzerland.
Near-interface traps
Interface states
Aluminum oxide
Gate dielectrics
Author
Rabia Y. Khosa
University of Iceland
Einar Sveinbjӧrnsson
University of Iceland
Linköping University
Michael Winters
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
J. Hassan
Linköping University
Robin Karhu
Linköping University
Erik Janzén
Linköping University
Niklas Rorsman
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Materials Science Forum
0255-5476 (ISSN) 16629752 (eISSN)
Vol. 897 MSF 135-138978-303571043-4 (ISBN)
Subject Categories
Materials Engineering
DOI
10.4028/www.scientific.net/MSF.897.135
ISBN
978-303571043-4