Morphological and electrical comparison of Ti and Ta based ohmic contacts for AlGaN/GaN-on-SiC HFETs
Journal article, 2017
Ohmic contact
Morphology
Current collapse
Leakage current
GaN
Transistor
Author
A. Pooth
IQE (Europe) Ltd.
University of Bristol
Johan Bergsten
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Niklas Rorsman
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
H. Hirshy
Cardiff University
R. Perks
Cardiff University
Paul J. Tasker
Cardiff University
T. Martin
IQE (Europe) Ltd.
R. F. Webster
University of Bristol
D. Cherns
University of Bristol
M. J. Uren
University of Bristol
M. Kuball
University of Bristol
Microelectronics and Reliability
0026-2714 (ISSN)
Vol. 68 2-4Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1016/j.microrel.2016.11.002