Optimization of InGaAs Channel for Cryogenic InP HEMT Low-Noise Amplifiers

Other conference contribution, 2023

The noise temperature was measured for InP HEMTs in cryogenic low-noise amplifiers (LNAs) with channel indium content varied from 53% to 70%. The Hall measurements for all the epitaxial structures and dc characteristics of InP HEMTs were characterized. The 4–8 GHz LNA with lattice-matched channel InP HEMTs has the highest noise temperature at 5 K. The LNAs with 60% and 70% channel exhibited similar noise of 1.4 K at the optimum noise bias at 5 K. The 60% channel InP HEMT showed the lowest drain noise temperature with 10.5 mW power consumption and the lowest LNA noise at low power with 3.3 K for 100 μW. The results indicate that there is an optimum indium channel composition for InP HEMTs in cryogenic LNAs.