Junjie Li
She is a PhD student at TML, focusing on InP HEMT for cryogenic low-noise amplifiers. She obtained M.Sc degree in Applied physics at Chalmers, 2019 and B.S. degree at Sun Yat-sen University, Guangzhou, China, 2017. Since December 2018 she joined TML in Chalmers University of Technology as an Amanuens. Her master thesis involves graphene transistor for microwave and terahertz applications.
Showing 8 publications
Optimization of InGaAs Channel for Cryogenic InP HEMT Low-Noise Amplifiers
100-μW Cryogenic HEMT LNAs for Quantum Computing
Design and Fabrication of InP High Electron Mobility Transistors for Cryogenic Low-Noise Amplifiers
Influence of Spacer Thickness on the Noise Performance in InP HEMTs for Cryogenic LNAs
On the relation between rf noise and subthreshold swing in InP HEMTs for cryogenic LNAs
High frequency noise characterisation of graphene field-effect transistors at different temperatures
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