High frequency noise characterisation of graphene field-effect transistors at different temperatures
Conference poster, 2019

Graphene is a promising material for high frequency electronics applications thanks to its intrinsically high carrier mobility and velocity, and graphene transistors are continuously pushed toward higher operating frequencies [1]. For high frequency low noise amplifiers, it is important to evaluate the noise
parameters of the graphene field-effect transistors (GFETs). In this work, we present the noise performance of the GFETs made of chemical vapour deposition (CVD) in the frequency and temperature ranges of 2-18 GHz and -60-25 C. The noise figure with 50 Ohm impedance termination (F50) was
measured using the cold-source method and then the minimum noise figure (Fmin) was estimated using the Pospieszalski’s noise model [2, 3]. In Fig. 1 and Fig. 2, the Fmin of a GFET with a gate length of 0.5 μm as a function of the frequency (f) and drain voltage (Vd) at different temperatures are shown. This GFET revealed maximum frequency of oscillation (fmax) of 18 and 21 GHz at 25 and -60 °C, respectively. It can be seen from Fig. 1, that the Fmin at 8 GHz is approx. 2 dB lower than that of the previously published CVD GFETs and comparable with that of the best published SiC GFETs [4, 5]. The Fmin decreases significantly with temperature down to 0.3 dB at 8 GHz, competing with Si CMOS [6]. It can be seen from Fig. 2, that Fmin decreases with the Vd and saturates above approx. 1 V, where GFETs operate in the velocity saturation mode [1]. Analysis of the dependences allows for further development of the GFETs for advanced low noise amplifiers.

graphene field-effect transistors

low noise amplifiers

Author

Junjie Li

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Xinxin Yang

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Marlene Bonmann

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Muhammad Asad

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Andrei Vorobiev

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Jan Stake

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Luca Banszerus

RWTH Aachen University

Christoph Stampfer

RWTH Aachen University

Martin Otto

AMO

Daniel Neumaier

AMO

Graphene Week 2019
Helsinki, Finland,

Areas of Advance

Information and Communication Technology

Nanoscience and Nanotechnology (2010-2017)

Infrastructure

Kollberg Laboratory

Nanofabrication Laboratory

Driving Forces

Sustainable development

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

More information

Created

10/28/2019