Muhammad Asad

Showing 18 publications

2023
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Enhanced Hall mobility in graphene-on-electronic-grade diamond

Saman Majdi, Viktor Djurberg, Muhammad Asad et al
Applied Physics Letters. Vol. 123
Journal article
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2022
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Graphene FET on diamond for high-frequency electronics

Muhammad Asad, Saman Majdi, Andrei Vorobiev et al
IEEE Electron Device Letters. Vol. 43 (2), p. 300-303
Journal article
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2021
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Mobility degradation and series resistance in graphene field-effect transistors

Kjell Jeppson, Muhammad Asad, Jan Stake
IEEE Transactions on Electron Devices. Vol. 68 (6), p. 3091-3095
Journal article
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2021
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Enhanced high-frequency performance of top-gated graphene FETs due to substrate-induced improvements in charge carrier saturation velocity

Muhammad Asad, Kjell Jeppson, Andrei Vorobiev et al
IEEE Transactions on Electron Devices. Vol. 68 (2), p. 899-902
Journal article
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2021
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Integrated 10-GHz Graphene FET Amplifier

Ahmed Hamed, Muhammad Asad, Muh-Dey Wei et al
IEEE Journal of Microwaves. Vol. 1 (3), p. 821-826
Journal article
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2020
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The dependence of the high-frequency performance of graphene field-effect transistors on channel transport properties

Muhammad Asad, Marlene Bonmann, Xinxin Yang et al
IEEE Journal of the Electron Devices Society. Vol. 8, p. 457-464
Journal article
2020
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Does carrier velocity saturation help to enhance fmax in graphene field-effect transistors?

Pedro C. Feijoo, Francisco Pasadas, Marlene Bonmann et al
Nanoscale Advances. Vol. 2 (9), p. 4179-4186
Journal article
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2019
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Graphene Field-Effect Transistors for Millimeter Wave Amplifiers

Andrei Vorobiev, Marlene Bonmann, Muhammad Asad et al
International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz. Vol. 2019-September
Paper in proceeding
2019

High frequency noise characterisation of graphene field-effect transistors at different temperatures

Junjie Li, Xinxin Yang, Marlene Bonmann et al
Conference poster
2019
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Effects of self-heating on high-frequency performance of graphene field-effect transistors

Marlene Bonmann, Marijana Krivic, Muhammad Asad et al
Other conference contribution
2019
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Graphene field-effect transistors with high extrinsic fT and fmax

Marlene Bonmann, Muhammad Asad, Xinxin Yang et al
IEEE Electron Device Letters. Vol. 40 (1), p. 131-134
Journal article
2019
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Correlation between material quality and high frequency performance of graphene field-effect transistors

Muhammad Asad, Marlene Bonmann, Xinxin Yang et al
Other conference contribution
2018

Drain current saturation in graphene field-effect transistors at high fields

Marlene Bonmann, Andrei Vorobiev, Xinxin Yang et al
Conference poster
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2018
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Graphene field-effect transistors for high frequency applications

Muhammad Asad, Marlene Bonmann, Xinxin Yang et al
Paper in proceeding
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2017

GaInN Quantum Wells as Optochemical Transducers for Chemical Sensors and Biosensors

D. Heinz, F. Huber, M. Spiess et al
IEEE Journal of Selected Topics in Quantum Electronics. Vol. 23 (2), p. 15-23
Journal article
2017

Effect of nano-apertures pattern on InAs nanowires evolution process grown by selective area molecular beam epitaxy

Muhammad Asad, Ghada Badawy, Huan Zhao Ternehäll et al
44th International Symposium on Compound Semiconductors (ISCS), 2017 Compound Semiconductor Week (CSW2017), Berlin, Germany, May 14-18, 2017
Paper in proceeding

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