Correlation between material quality and high frequency performance of graphene field-effect transistors
Conference contribution, 2019
maximum frequency of oscillation
field effect transistors
high frequency
transit frequency
graphene
microwave electronics
contact resistances
spatial inhomogeneity
Author
Muhammad Asad
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Marlene Bonmann
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Xinxin Yang
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Andrei Vorobiev
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Jan Stake
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Helsinki, Finland,
Areas of Advance
Information and Communication Technology
Nanoscience and Nanotechnology (SO 2010-2017, EI 2018-)
Driving Forces
Sustainable development
Innovation and entrepreneurship
Subject Categories
Medical Laboratory and Measurements Technologies
Geotechnical Engineering
Other Electrical Engineering, Electronic Engineering, Information Engineering
Roots
Basic sciences
Infrastructure
Nanofabrication Laboratory