Correlation between material quality and high frequency performance of graphene field-effect transistors
Conference contribution, 2019

Correlations between material quality, equivalent circuit and high frequency parameters of the graphene field-effect transistors, such as mobility, contact resistivity, carrier velocity, drain conductivity, transit frequency and maximum frequency of oscillation, have been established via applying drain resistance, velocity and saturation velocity models. The correlations allow for understanding dominant limitations of the high frequency performance of transistors, which clarifies the ways of their further development. In particular, the relatively high drain conductivity is currently main limiting factor, which, however, can be counterbalanced by increasing the carrier velocity via operating transistors at higher fields, in the velocity saturation mode.

maximum frequency of oscillation

contact resistances

spatial inhomogeneity

field effect transistors

microwave electronics

graphene

transit frequency

high frequency

Author

Muhammad Asad

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Marlene Bonmann

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Xinxin Yang

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Andrei Vorobiev

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Jan Stake

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Graphene Week 2019
Helsinki, Finland,

Areas of Advance

Information and Communication Technology

Nanoscience and Nanotechnology (2010-2017)

Driving Forces

Sustainable development

Innovation and entrepreneurship

Subject Categories

Medical Laboratory and Measurements Technologies

Geotechnical Engineering

Other Electrical Engineering, Electronic Engineering, Information Engineering

Roots

Basic sciences

Infrastructure

Nanofabrication Laboratory

More information

Created

10/28/2019