Graphene field-effect transistors with high extrinsic fT and fmax
Journal article, 2019
transit frequency
scaling
graphene
maximum frequency of oscillation
field-effect transistor
Author
Marlene Bonmann
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Muhammad Asad
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Xinxin Yang
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Andrey Generalov
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Andrei Vorobiev
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Luca Banszerus
Christoph Stampfer
Martin Otto
Daniel Neumaier
Jan Stake
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
IEEE Electron Device Letters
0741-3106 (ISSN)
Vol. 40 1 131-134 8552417Areas of Advance
Information and Communication Technology
Nanoscience and Nanotechnology (SO 2010-2017, EI 2018-)
Infrastructure
Kollberg Laboratory
Nanofabrication Laboratory
Subject Categories
Physical Sciences
Electrical Engineering, Electronic Engineering, Information Engineering
Nano Technology
DOI
10.1109/LED.2018.2884054