Drain current saturation in graphene field-effect transistors at high fields
Conference poster, 2018

Development of competitive high frequency graphene field-effect transistors (GFETs) is hindered, first of all, by a zero-bandgap phenomenon in monolayer graphene, which prevents the drain current saturation and limits significantly the GFET power gain. An approach has been proposed to realise the drain current saturation in GFETs without a bandgap formation, but via velocity saturation of the charge carriers at high fields [1]. In this work, we report on the performance of GFETs fabricated using high quality CVD monolayer graphene and modified technology, which reduce the concentration of
traps generating the charge carriers at high fields [2]. Fig. 1 shows typical output characteristics of GFETs with gate length of 0.5 μm. The drain current clearly reveals the saturation trends at high fields, which we associate with the saturation of the carrier velocity, see inset to Fig. 2 [2]. Fig. 2 shows typical measured (extrinsic) transit frequency (fT) and the maximum frequency of oscillation (fmax), which are characteristics of the current and power gain, respectively. Since fT and fmax are proportional to the carrier velocity, they reveal similar saturation behaviour. We analyse the saturation
effects by applying the Fermi-Dirac carrier statistics. The fT and fmax are up to 34 GHz and 37 GHz, respectively, which are highest among those reported so far for the GFETs with similar gate length and comparable with those reported for Si MOSFETs [3].

field-effect transistors

drain current

graphene

high frequency performance

Author

Marlene Bonmann

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Andrei Vorobiev

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Xinxin Yang

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Muhammad Asad

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Jan Stake

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Luca Banszerus

RWTH Aachen University

Christoph Stampfer

RWTH Aachen University

Martin Otto

AMO

Daniel Neumaier

AMO

Pedro C. Feijoo

Universitat Autonoma de Barcelona (UAB)

Francisco Pasadas

Universitat Autonoma de Barcelona (UAB)

David Jiménez

Universitat Autonoma de Barcelona (UAB)

Graphene Week
San Sebastian, Spain,

Carbon Based High Speed 3D GaN Electronics System

Swedish Foundation for Strategic Research (SSF), 2014-03-01 -- 2019-06-30.

Flexibla terahertz detektorer i grafen

Swedish Research Council (VR), 2018-01-01 -- 2021-12-31.

Areas of Advance

Information and Communication Technology

Nanoscience and Nanotechnology (2010-2017)

Infrastructure

Kollberg Laboratory

Nanofabrication Laboratory

Driving Forces

Sustainable development

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

Condensed Matter Physics

More information

Latest update

12/17/2018