100-μW Cryogenic HEMT LNAs for Quantum Computing
Paper in proceeding, 2023

Low-power cryogenic LNAs are of interest in future large-scale quantum computing where available cooling capability limits the number of active circuits. We present a comparison of small-signal noise models between two different 100-nm gate-length InP HEMTs at 4 K. The HEMTs were tested in the first stage of a three-stage hybrid cryogenic 4-6 GHz LNA operating at 100-W dc power. The better performing cryogenic LNA exhibited 23.2 dB average gain, 2.0 K average noise temperature, and-55dBm input 1-dB compression point. The enhanced LNA performance was attributed to the improved transconductance of the first-stage HEMT. To the authors' knowledge, this is the lowest noise reported to date for a 100-W transistor-based LNA aimed for qubit readout.

InP HEMT

quantum computing

Cryogenic

low-noise amplifier

low-power

Author

Yin Zeng

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Junjie Li

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Jörgen Stenarson

Low Noise Factory AB

Peter Sobis

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Low Noise Factory AB

Jan Grahn

Low Noise Factory AB

2023 18th European Microwave Integrated Circuits Conference, EuMIC 2023

71-74
9782874870736 (ISBN)

18th European Microwave Integrated Circuits Conference, EuMIC 2023
Berlin, Germany,

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.23919/EuMIC58042.2023.10288982

More information

Latest update

1/3/2024 9