100-μW Cryogenic HEMT LNAs for Quantum Computing
Paper i proceeding, 2023

Low-power cryogenic LNAs are of interest in future large-scale quantum computing where available cooling capability limits the number of active circuits. We present a comparison of small-signal noise models between two different 100-nm gate-length InP HEMTs at 4 K. The HEMTs were tested in the first stage of a three-stage hybrid cryogenic 4-6 GHz LNA operating at 100-W dc power. The better performing cryogenic LNA exhibited 23.2 dB average gain, 2.0 K average noise temperature, and-55dBm input 1-dB compression point. The enhanced LNA performance was attributed to the improved transconductance of the first-stage HEMT. To the authors' knowledge, this is the lowest noise reported to date for a 100-W transistor-based LNA aimed for qubit readout.

InP HEMT

quantum computing

Cryogenic

low-noise amplifier

low-power

Författare

Yin Zeng

Chalmers, Mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik

Junjie Li

Chalmers, Mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik

Jörgen Stenarson

Low Noise Factory AB

Peter Sobis

Chalmers, Mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik

Low Noise Factory AB

Jan Grahn

Low Noise Factory AB

2023 18th European Microwave Integrated Circuits Conference, EuMIC 2023

71-74
9782874870736 (ISBN)

18th European Microwave Integrated Circuits Conference, EuMIC 2023
Berlin, Germany,

Ämneskategorier

Annan elektroteknik och elektronik

DOI

10.23919/EuMIC58042.2023.10288982

Mer information

Senast uppdaterat

2024-01-03