Yin Zeng
Yin Zeng is current working in the design and measurement of ultra-low power consumption low noise amplifier. He has backgrounds in microwave circuit design and on-wafer semiconductor devices characterization and modeling. His goal of research is to reduce the power consumption of ultra-low noise amplifier based on InP HEMT to less than 100 micro-Watt under cryogenic operation.
Showing 6 publications
Sub-mW Cryogenic InP HEMT LNA for Qubit Readout
Transient Noise and Gain Characterization for Pulse-Operated LNAs
100-μW Cryogenic HEMT LNAs for Quantum Computing
A 100-µW 4-6 GHz Cryogenic InP HEMT LNA Achieving an Average Noise Temperature of 2.6 K
A 100-mu W 4-6 GHz Cryogenic InP HEMT LNA Achieving an Average Noise Temperature of 2.6 K
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