Low-Power HEMT LNAs for Quantum Computing
Licentiate thesis, 2023
A small-signal noise model of a 100-nm gate-length InP HEMTs has been characterized and extracted at 4 K ambient under low-power bias down to 1 μW. The extracted low-power small-signal noise models revealed fast degradation points of drain voltage bias for RF and noise performance.
The design goals of the cryogenic LNA were tailored for a superconducting qubit readout application based on the extracted low-power small-signal noise model of the InP HEMT for optimum noise and power consumption trade-off. A cryogenic InP HEMT hybrid LNA operating in the 4-6 GHz frequency range at 200 μW with an average noise temperature of 2.0 K has been designed, fabricated, and successfully demonstrated, validating the extracted model and design methodology.
An epitaxially-optimized InP HEMT was modeled with the low-power methodology. The comparison of the small-signal noise model parameters to the standard InP HEMT showed improved transconductance, matching, and noise at the same bias power. The demonstrated three-stage cryogenic 4-6 GHz LNA equipped with an optimized HEMT as the first stage achieved 2.0 K average noise temperature at 100 μW dc power dissipation, representing a new state-of-the-art. This licentiate thesis has presented experimental evidence that there is large potential in reducing dc power in the cryogenic InP HEMT LNA for qubit readout which can be important for the planned up-scaling in future quantum computing.
low-noise amplifier
qubit
Cryogenic
InP HEMT.
quantum computing
low-power
Author
Yin Zeng
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Pulsed low-noise amplifiers for quantum information systems
VINNOVA (2022-00830), 2022-07-01 -- 2024-06-30.
Cryonoise
VINNOVA (2019-03544), 2019-10-01 -- 2022-03-31.
Areas of Advance
Information and Communication Technology
Nanoscience and Nanotechnology
Infrastructure
Kollberg Laboratory
Nanofabrication Laboratory
Driving Forces
Sustainable development
Innovation and entrepreneurship
Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
Publisher
Chalmers
Fasrummet A820, Kemivägen 9, Chalmers.
Opponent: Sten Gunnarsson, Saab/Chalmers University of Technology, Sweden