A 100-mu W 4-6 GHz Cryogenic InP HEMT LNA Achieving an Average Noise Temperature of 2.6 K
Paper in proceeding, 2022
Low-power LNAs at 4 K are critical for the scaling up of quantum computing systems due to the limited cooling capability in the dilution refrigerator. This paper presents design and fabrication of a cryogenic hybrid three-stage InP HEMT LNA working from 4 to 6 GHz. The design was conducted using a DC power optimized bias model of the InP HEMT. The 4 K measurement showed 2.6 K average noise temperature and more than 22 dB average gain of the InP HEMT LNA consuming only 100 mu W DC power.
Hybrid integrated circuit
Cryogenic
Low-power
InP HEMT
Low-noise amplifier
Quantum computing
Author
Yin Zeng
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Jorgen Stenarson
Low Noise Factory AB
Peter Sobis
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Niklas Wadefalk
Low Noise Factory AB
Jan Grahn
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
2022 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC)
13-15
978-4-902339-56-7 (ISBN)
Asia-Pacific Microwave Conference (APMC)
Yokohama, Japan,
Yokohama, Japan,
Subject Categories (SSIF 2011)
Aerospace Engineering
Energy Engineering
Other Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.23919/APMC55665.2022.9999965