A 100-mu W 4-6 GHz Cryogenic InP HEMT LNA Achieving an Average Noise Temperature of 2.6 K
Paper in proceeding, 2022

Low-power LNAs at 4 K are critical for the scaling up of quantum computing systems due to the limited cooling capability in the dilution refrigerator. This paper presents design and fabrication of a cryogenic hybrid three-stage InP HEMT LNA working from 4 to 6 GHz. The design was conducted using a DC power optimized bias model of the InP HEMT. The 4 K measurement showed 2.6 K average noise temperature and more than 22 dB average gain of the InP HEMT LNA consuming only 100 mu W DC power.

Cryogenic

Hybrid integrated circuit

Quantum computing

Low-power

InP HEMT

Low-noise amplifier

Author

Yin Zeng

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Jorgen Stenarson

Low Noise Factory AB

Peter Sobis

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Niklas Wadefalk

Low Noise Factory AB

Jan Grahn

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

2022 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC)

13-15
978-4-902339-56-7 (ISBN)

Asia-Pacific Microwave Conference (APMC)
Yokohama, Japan,

Subject Categories

Aerospace Engineering

Energy Engineering

Other Electrical Engineering, Electronic Engineering, Information Engineering

More information

Latest update

10/27/2023