Sub-mW Cryogenic InP HEMT LNA for Qubit Readout
Journal article, 2024
The cryogenic indium phosphide (InP) highelectron-mobility transistor (HEMT) low-noise amplifier (LNA) is used for the readout amplification of qubits at 4 K where cooling capabilities are limited implying that the dc power of the active circuits is an essential design constraint. In this article, the RF and noise performance of the InP HEMT under ultralow-power (ULP) operation at 4 K has been characterized. The small-signal and noise parameter model of the InP HEMT was extracted down to 1 mu W. The tradeoff between noise performance and dc power consumption was analyzed in terms of the drain current and drain voltage. A 4-6 GHz hybrid cryogenic HEMT LNA designed for qubit readout and optimized for lowest noise below 1 mW dc power consumption was fabricated. The measured performance of the LNA at 4 K attained 23.1 dB average gain and 2.0 K average noise temperature at 200 mu W dc power.
low power
indium phosphide high-electronmobility
qubit.
(LNA)
low-noise amplifier
transistor (InP HEMT)
Cryogenic
Author
Yin Zeng
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Jorgen Stenarson
Low Noise Factory AB
Peter Sobis
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Niklas Wadefalk
Low Noise Factory AB
Jan Grahn
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
IEEE Transactions on Microwave Theory and Techniques
0018-9480 (ISSN) 15579670 (eISSN)
Vol. 72 3 1606-1617Subject Categories
Other Electrical Engineering, Electronic Engineering, Information Engineering
Condensed Matter Physics
DOI
10.1109/TMTT.2023.3312471