Pulsed HEMT LNA Operation for Qubit Readout
Journal article, 2025

Large-scale qubit readout in quantum computing systems requires highly sensitive amplification with minimal power consumption to reduce the thermal load and preserve qubit integrity. We propose a pulse-operated cryogenic low-noise amplifier (LNA) scheme that minimizes the influence of the LNA on qubit operation and reduces power consumption by duty cycling. A modified commercially available cryogenic hybrid LNA based on InP high-electron mobility transistors (HEMTs) has been characterized to demonstrate the feasibility of pulsed operation for qubit readout. The transient noise and gain performance of the LNA were obtained through a cryogenic time domain noise measurement setup with 5-ns time resolution and a measured noise standard deviation (SD) below 0.3 K. The time-domain noise and gain performance of the LNA in response to a square gate voltage waveform were investigated. Through an analysis of the LNA’s recovery limitations, we developed a fast recovery bias strategy leading to the optimization of the gate voltage waveform using a genetic algorithm (GA). This resulted in a strong enhancement of transient noise and gain performance with a recovery time of 35 ns. The drain current transients were measured to calculate the average power consumption of the pulse-operated LNA, which confirmed a reduction in average power consumption proportional to the duty cycle. This work contributes to the development of high-performance and low-power amplifier solutions critical for large-scale qubit readout applications.

pulsed operation

Cryogenic

InP high-electron mobility transistor (HEMT)

low power

qubit readout

low-noise amplifier (LNA)

Author

Yin Zeng

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Jörgen Stenarson

Low Noise Factory AB

Peter Sobis

Low Noise Factory AB

Jan Grahn

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

IEEE Transactions on Microwave Theory and Techniques

0018-9480 (ISSN) 15579670 (eISSN)

Vol. In Press

Subject Categories (SSIF 2025)

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/TMTT.2025.3556982

More information

Latest update

5/8/2025 8