Design and Fabrication of InP High Electron Mobility Transistors for Cryogenic Low-Noise Amplifiers
Licentiate thesis, 2022
Channel noise
InP HEMT
cryogenic
subthreshold swing.
noise temperature
spacer thickness
low-noise amplifier
Author
Junjie Li
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Reduction of Noise Temperature in Cryogenic InP HEMT Low Noise Amplifiers with Increased Spacer Thickness in InAlAs-InGaAs-InP Heterostructures
Other conference contribution
Influence of Spacer Thickness on the Noise Performance in InP HEMTs for Cryogenic LNAs
IEEE Electron Device Letters,;Vol. 43(2022)p. 1029-1032
Journal article
On the relation between rf noise and subthreshold swing in InP HEMTs for cryogenic LNAs
Asia-Pacific Microwave Conference Proceedings, APMC,;(2022)p. 10-12
Paper in proceeding
Subject Categories
Nano Technology
Electrical Engineering, Electronic Engineering, Information Engineering
Technical report MC2 - Department of Microtechnology and Nanoscience, Chalmers University of Technology: 457
Publisher
Chalmers
Fasrummet A820
Opponent: Prof. Shu Min Wang, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Sweden