Design and Fabrication of InP High Electron Mobility Transistors for Cryogenic Low-Noise Amplifiers
Licentiatavhandling, 2022
Channel noise
InP HEMT
cryogenic
subthreshold swing.
noise temperature
spacer thickness
low-noise amplifier
Författare
Junjie Li
Chalmers, Mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik
Reduction of Noise Temperature in Cryogenic InP HEMT Low Noise Amplifiers with Increased Spacer Thickness in InAlAs-InGaAs-InP Heterostructures
Övrigt konferensbidrag
Influence of Spacer Thickness on the Noise Performance in InP HEMTs for Cryogenic LNAs
IEEE Electron Device Letters,;Vol. 43(2022)p. 1029-1032
Artikel i vetenskaplig tidskrift
On the relation between rf noise and subthreshold swing in InP HEMTs for cryogenic LNAs
Asia-Pacific Microwave Conference Proceedings, APMC,;(2022)p. 10-12
Paper i proceeding
Ämneskategorier
Nanoteknik
Elektroteknik och elektronik
Technical report MC2 - Department of Microtechnology and Nanoscience, Chalmers University of Technology: 457
Utgivare
Chalmers
Fasrummet A820
Opponent: Prof. Shu Min Wang, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Sweden