Design and Fabrication of InP High Electron Mobility Transistors for Cryogenic Low-Noise Amplifiers
Licentiatavhandling, 2022

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Channel noise

InP HEMT

cryogenic

subthreshold swing.

noise temperature

spacer thickness

low-noise amplifier

Författare

Junjie Li

Chalmers, Mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik

Inkluderade delarbeten

Kategorisering

Ämneskategorier (SSIF 2011)

Nanoteknik

Elektroteknik och elektronik

Övrigt

Serie

Technical report MC2 - Department of Microtechnology and Nanoscience, Chalmers University of Technology: 457

Utgivare

Chalmers

Examination

2022-11-21 10:00 -- 11:00

Fasrummet A820

Opponent: Prof. Shu Min Wang, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Sweden

Mer information

Senast uppdaterat

2023-10-26