Optimization of Channel Structures in InP HEMT Technology for Cryogenic Low-Noise and Low-Power Operation
Journal article, 2023
indium (In) channel content
Indium phosphide
quantum computer
noise
InP high-electron mobility transistor (HEMT)
Cryogenic
dc power
low-noise amplifier (LNA)
Cryogenics
III-V semiconductor materials
Logic gates
Qubit
HEMTs
Transconductance
Author
Eunjung Cha
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Niklas Wadefalk
Low Noise Factory AB
Giuseppe Moschetti
Qamcom Research & Technology
Arsalan Pourkabirian
Low Noise Factory AB
Jörgen Stenarson
Low Noise Factory AB
Junjie Li
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Dae Hyun Kim
Kyungpook National University
Jan Grahn
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
IEEE Transactions on Electron Devices
0018-9383 (ISSN) 15579646 (eISSN)
Vol. 70 5 2431-2436Subject Categories
Other Physics Topics
Other Electrical Engineering, Electronic Engineering, Information Engineering
Condensed Matter Physics
DOI
10.1109/TED.2023.3255160