Eunjung Cha
Showing 10 publications
InP High Electron Mobility Transistors for Cryogenic Low-Noise and Low-Power Amplifiers
InP HEMTs for Sub-mW Cryogenic Low-Noise Amplifiers
A 300-µW Cryogenic HEMT LNA for Quantum Computing
0.3-14 and 16-28 GHz Wide-Bandwidth Cryogenic MMIC Low-Noise Amplifiers
InP High Electron Mobility Transistor Design for Cryogenic Low Noise Amplifiers
Two-Finger InP HEMT Design for Stable Cryogenic Operation of Ultra-Low-Noise Ka- and Q-Band LNAs
Two-finger InP HEMT design for stable cryogenic operation of ultra-low-noise Ka-band LNAs
Cryogenic LNAs for SKA band 2 to 5
Cryogenic W-band LNA for ALMA band 2+3 with average noise temperature of 24 K
Cryogenic low-noise InP HEMTs: A source-drain distance study
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