III-V HEMTs for cryogenic low noise amplifiers
Paper in proceedings, 2020

The InP HEMT is the preferred transistor technology for cryogenic low-noise amplification from 1 GHz up to 200 GHz. The InP HEMT shows its superiority at temperatures 5 to 15 K and technology development must be made with knowledge about the special circumstances occurring in III- V materials and device operating under cryogenic conditions. We report on how to electrically stabilize the cryogenic two-finger HEMT at low temperature making it possible to design low-noise amplifiers with state of the art noise performance up to mm-wave. We also demonstrate recent progress on optimizing the InP HEMT for cryogenic low-noise amplifier operation below 1 mW dc power dissipation, of interest for qubit readout electronics.

Author

Jan Grahn

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Eunjung Cha

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Arsalan Pourkabirian

Low Noise Factory AB

Jörgen Stenarson

Low Noise Factory AB

Niklas Wadefalk

Low Noise Factory AB

Technical Digest - International Electron Devices Meeting, IEDM

01631918 (ISSN)

Vol. 2020-December 25.6.1-25.6.4 9372031

66th Annual IEEE International Electron Devices Meeting, IEDM 2020
Virtual, San Francisco, USA,

Subject Categories

Other Engineering and Technologies not elsewhere specified

Other Physics Topics

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/IEDM13553.2020.9372031

More information

Latest update

4/15/2021