III-V HEMTs for cryogenic low noise amplifiers
Paper in proceeding, 2020
The InP HEMT is the preferred transistor technology for cryogenic low-noise amplification from 1 GHz up to 200 GHz. The InP HEMT shows its superiority at temperatures 5 to 15 K and technology development must be made with knowledge about the special circumstances occurring in III- V materials and device operating under cryogenic conditions. We report on how to electrically stabilize the cryogenic two-finger HEMT at low temperature making it possible to design low-noise amplifiers with state of the art noise performance up to mm-wave. We also demonstrate recent progress on optimizing the InP HEMT for cryogenic low-noise amplifier operation below 1 mW dc power dissipation, of interest for qubit readout electronics.
Author
Jan Grahn
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Eunjung Cha
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Arsalan Pourkabirian
Low Noise Factory AB
Jörgen Stenarson
Low Noise Factory AB
Niklas Wadefalk
Low Noise Factory AB
Technical Digest - International Electron Devices Meeting, IEDM
01631918 (ISSN)
Vol. 2020-December 25.6.1-25.6.4 93720319781728188881 (ISBN)
66th Annual IEEE International Electron Devices Meeting, IEDM 2020
Virtual, San Francisco, USA,
Virtual, San Francisco, USA,
Subject Categories (SSIF 2011)
Other Engineering and Technologies not elsewhere specified
Other Physics Topics
Other Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/IEDM13553.2020.9372031