III-V HEMTs for cryogenic low noise amplifiers
Paper i proceeding, 2020

The InP HEMT is the preferred transistor technology for cryogenic low-noise amplification from 1 GHz up to 200 GHz. The InP HEMT shows its superiority at temperatures 5 to 15 K and technology development must be made with knowledge about the special circumstances occurring in III- V materials and device operating under cryogenic conditions. We report on how to electrically stabilize the cryogenic two-finger HEMT at low temperature making it possible to design low-noise amplifiers with state of the art noise performance up to mm-wave. We also demonstrate recent progress on optimizing the InP HEMT for cryogenic low-noise amplifier operation below 1 mW dc power dissipation, of interest for qubit readout electronics.

Författare

Jan Grahn

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

Eunjung Cha

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

Arsalan Pourkabirian

Low Noise Factory AB

Jörgen Stenarson

Low Noise Factory AB

Niklas Wadefalk

Low Noise Factory AB

Technical Digest - International Electron Devices Meeting, IEDM

01631918 (ISSN)

Vol. 2020-December 25.6.1-25.6.4 9372031

66th Annual IEEE International Electron Devices Meeting, IEDM 2020
Virtual, San Francisco, USA,

Ämneskategorier

Övrig annan teknik

Annan fysik

Annan elektroteknik och elektronik

DOI

10.1109/IEDM13553.2020.9372031

Mer information

Senast uppdaterat

2021-04-15