InP High Electron Mobility Transistors for Cryogenic Low-Noise and Low-Power Amplifiers
Doctoral thesis, 2020
This thesis presents progress in InP HEMT technology for cryogenic LNAs. Three areas are addressed: device scaling, dc power optimization, and electrical stability at cryogenic temperature. The InP HEMT optimization are discussed in terms of the epitaxial layer design, fabrication, dc, rf, and noise characteristics.
A 100 nm gate-length InP HEMT technology was developed by scaling of the barrier thickness. Despite increased gate leakage current, state-of-the-art cryogenic noise performance for a wide-band monolithic microwave integrated circuit (MMIC) LNAs was demonstrated with average noise temperature of 3.5 K and 6.3 K for the 0.3-14 GHz and 16-28 GHz designs, respectively.
The impact of barrier thickness and channel composition on the cryogenic noise temperature and dc power dissipation of the InP HEMT LNAs was studied. Through the barrier scaling, the HEMT achieved an improvement of transconductance to drain current ratio at low drain voltages, which enabled a reduction of the power dissipation to 112 uW with an average noise temperature of 4.1 K in a 4-8 GHz InP HEMT LNA. From a comparative study of In0.65Ga0.35As and In0.8Ga0.2As channels, the InP HEMT with lower indium channel content resulted in superior cryogenic noise performance.
The cryogenic stability of two-finger InP HEMTs was investigated. The InP HEMTs exhibited anomalous electrical behavior such as jumps in drain current and sharp peaks in transconductance. Three different design techniques were shown to mitigate the electrical instabilities associated with cryogenic operation. A cryogenic 24–40 GHz and a 28–52 GHz MMIC LNA based on the source air-bridge design technique for the two-finger InP HEMTs were demonstrated. The average noise temperature was 10.6 K and 10 K in the 24-40 GHz and 28-52 GHz LNAs, respectively. Both LNA designs demonstrated the lowest noise temperature reported so far for cryogenic MMIC LNAs for these frequency bands.
InP high-electron mobility transistor (InP HEMT)
low-noise amplifier (LNA)
indium channel content
dc power dissipation
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
InP HEMTs for Sub-mW Cryogenic Low-Noise Amplifiers
IEEE Electron Device Letters,; Vol. 41(2020)p. 1005-1008
A 300-µW Cryogenic HEMT LNA for Quantum Computing
IEEE MTT-S International Microwave Symposium Digest,; Vol. 2020-August(2020)p. 1299-1302
Paper in proceeding
0.3-14 and 16-28 GHz Wide-Bandwidth Cryogenic MMIC Low-Noise Amplifiers
IEEE Transactions on Microwave Theory and Techniques,; Vol. 66(2018)p. 4860-4869
Two-Finger InP HEMT Design for Stable Cryogenic Operation of Ultra-Low-Noise Ka- and Q-Band LNAs
IEEE Transactions on Microwave Theory and Techniques,; Vol. 65(2017)p. 5171-5180
Eunjung Cha, Niklas Wadefalk, Giuseppe Moschetti, Arsalan Pourkabirian, Jörgen Stenarson, Junjie Li, Dae-Hyun Kim, and Jan Grahn. InP HEMT Channel Design for Ultra-Low Power Cryogenic Low-Noise Amplifiers
Electrical Engineering, Electronic Engineering, Information Engineering
Doktorsavhandlingar vid Chalmers tekniska högskola. Ny serie: 4874
Kollektorn, Kemivägen 9, Göteborg, Sweden Online (password to zoom: ECdefence)
Opponent: Professor Sylvain Bollaert, lnstitut d'Electronique de Microelectronique et de Nanotechnologie (IEMN), University of Lille, France