Cryogenic low-noise InP HEMTs: A source-drain distance study
Paper in proceeding, 2016
The scaling effect of the source-drain distance was investigated in order to improve the performance of low-noise InP HEMTs at cryogenic temperatures 4-15 K. The highest dc transconductance at an operating temperature of 4.8 K and low bias power was achieved at a source-drain distance of 1.4 mu m. The extracted HEMT minimum noise temperature was 0.9 K at 5.8 GHz for a 3-stage 4-8 GHz hybrid low-noise amplifier at 10 K.
InP HEMT
low noise temperature
cryogenic operation
Author
Eunjung Cha
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
GigaHertz Centre
Arsalan Pourkabirian
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
GigaHertz Centre
Joel Schleeh
Low Noise Factory AB
Niklas Wadefalk
Low Noise Factory AB
Giuseppe Moschetti
Low Noise Factory AB
Piotr Starski
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
GigaHertz Centre
Göran Alestig
GigaHertz Centre
Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory
John Halonen
GigaHertz Centre
Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory
Bengt Nilsson
Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory
GigaHertz Centre
Per-Åke Nilsson
GigaHertz Centre
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Jan Grahn
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
GigaHertz Centre
2016 Compound Semiconductor Week, CSW 2016
Article number 7528576-
978-150901964-9 (ISBN)
Subject Categories
Condensed Matter Physics
DOI
10.1109/ICIPRM.2016.7528576
ISBN
978-150901964-9