On the relation between rf noise and subthreshold swing in InP HEMTs for cryogenic LNAs
Paper in proceeding, 2022

4 - 8 GHz low-noise amplifiers (LNAs) based on InP high electron mobility transistors (InP HEMTs) with different spacer thickness in the InAlAs-InGaAs heterostructure were fabricated and characterized at 5 K. A variation in the lowest average noise temperature of the LNA was observed with spacer thickness. We here report that the subthreshold swing (SS) at 5 K for the HEMT exhibited similar dependence with spacer thickness as the lowest average noise temperature of the LNA. This suggests that low-temperature characterization of SS for the HEMT can be used as a rapid assessment of anticipated noise performance in the cryogenic HEMT LNA.

InP HEMT

subthreshold swing

low-noise amplifier

noise

Cryogenic

Author

Junjie Li

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Arsalan Pourkabirian

Low Noise Factory AB

Johan Bergsten

Low Noise Factory AB

Niklas Wadefalk

Low Noise Factory AB

Jan Grahn

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Asia-Pacific Microwave Conference Proceedings, APMC

Vol. 2022-November 10-12
978-4-902339-56-7 (ISBN)

Asia-Pacific Microwave Conference (APMC)
Yokohama, Japan,

Infrastructure

Kollberg Laboratory

Nanofabrication Laboratory

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

Nano Technology

More information

Latest update

7/17/2024