Optimization of InGaAs Channel for Cryogenic InP HEMT Low-Noise Amplifiers
Övrigt konferensbidrag, 2023

The noise temperature was measured for InP HEMTs in cryogenic low-noise amplifiers (LNAs) with channel indium content varied from 53% to 70%. The Hall measurements for all the epitaxial structures and dc characteristics of InP HEMTs were characterized. The 4–8 GHz LNA with lattice-matched channel InP HEMTs has the highest noise temperature at 5 K. The LNAs with 60% and 70% channel exhibited similar noise of 1.4 K at the optimum noise bias at 5 K. The 60% channel InP HEMT showed the lowest drain noise temperature with 10.5 mW power consumption and the lowest LNA noise at low power with 3.3 K for 100 μW. The results indicate that there is an optimum indium channel composition for InP HEMTs in cryogenic LNAs.

low noise amplifier

noise

InP HEMT

Cryogenic

InGaAs channel

Författare

Junjie Li

Chalmers, Mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik

Johan Bergsten

Low Noise Factory AB

Arsalan Pourkabirian

Low Noise Factory AB

Niklas Wadefalk

Low Noise Factory AB

Jan Grahn

Chalmers, Mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik

Compound Semiconductor Week 2023
Jeju, South Korea,

Infrastruktur

Kollberglaboratoriet

Nanotekniklaboratoriet

Styrkeområden

Nanovetenskap och nanoteknik

Ämneskategorier

Elektroteknik och elektronik

Nanoteknik

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2024-02-09