Fabrication and improved performance of AlGaN/GaN HEMTs with regrown ohmic contacts and passivation-first process
Paper in proceedings, 2016

This work reports the fabrication of AlGaN/GaN HEMTs with regrown ohmic contacts using either a passivation-last or a passivation-first process, where the order of surface passivation and gate metallization processes is different. An improved performance is demonstrated using the passivation-first process, achieving a maximum current/power gain cutoff frequency (fT/fmax) around 60/127 GHz with an 80-nm gate length. The ohmic contacts were regrown with highly doped n-GaN, resulting in a contact resistance of ~0.2 Ω·mm. The RF performance can be further enhanced by reducing the extrinsic gate capacitance and short channel effects.

Regrowth

Passivation

High-electron-mobility transistors (HEMTs)

Author

Tongde Huang

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

C. Liu

Hong Kong University of Science and Technology

Johan Bergsten

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

H. Jiang

Hong Kong University of Science and Technology

K. M. Lau

Hong Kong University of Science and Technology

Niklas Rorsman

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

2016 Compound Semiconductor Week, CSW 2016; Toyama, Japan

Article no. 7528722-

Subject Categories

Condensed Matter Physics

DOI

10.1109/ICIPRM.2016.7528722

ISBN

978-150901964-9

More information

Created

10/8/2017