Spintronics with graphene-hexagonal boron nitride van der Waals heterostructures
Journal article, 2014

Hexagonal boron nitride (h-BN) is a large bandgap insulating isomorph of graphene, ideal for atomically thin tunnel barrier applications. In this letter, we demonstrate large area chemical vapor deposited (CVD) h-BN as a promising spin tunnel barrier in graphene spin transport devices. In such structures, the ferromagnetic tunnel contacts with h-BN barrier are found to show robust tunneling characteristics over a large scale with resistances in the favorable range for efficient spin injection into graphene. The non-local spin transport and precession experiments reveal spin lifetime approximate to 500 ps and spin diffusion length approximate to 1.6 mu m in graphene with tunnel spin polarization approximate to 11% at 100 K. The electrical and spin transport measurements at different injection bias current and gate voltages confirm tunnel spin injection through h-BN barrier. These results open up possibilities for implementation of large area CVD h-BN in spintronic technologies.

Author

Venkata Kamalakar Mutta

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

André Dankert

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Johan Bergsten

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Tommy Ive

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Saroj Prasad Dash

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Applied Physics Letters

0003-6951 (ISSN) 1077-3118 (eISSN)

Vol. 105 212405 212405

Areas of Advance

Information and Communication Technology

Nanoscience and Nanotechnology (2010-2017)

Materials Science

Subject Categories

Physical Sciences

Nano Technology

Infrastructure

Nanofabrication Laboratory

DOI

10.1063/1.4902814

More information

Created

10/7/2017