Saroj Prasad Dash

Docent at Department of Microtechnology and Nanoscience, Quantum Device Physics

Saroj Dash is leading a research group on Quantum device Physics, Nanoelectronics and Spintronics research at Chalmers. He holds a PhD degree in Physics from Max Planck Institute (2007, Stuttgart, Germany). His previous positions include postdocs at Uni. of Twente and Uni. of Groningen in Netherlands for three years. He was appointed at Chalmers in November 2010, where his group focus is on electronic charge and spin transport in graphene, semiconductor nanostructures, other two-dimensional materials and topological insulators. His group develops novel approaches for nanofabrication and design new measurement techniques that lead to fundamental physics experiments. The goal is to exploit spin degree of freedom of electrons for integration of memory and logic functionalities in nanoelectronic devices. Research interests –1. Graphene nanoelectronics and spintronics2. van der Waals heterostructures of 2D materials3. 2D semiconductors for electronics and spintronics4. Spin transport in silicon devices.5. Topological Insulators for spintronic devices.Major publications 1. Electrical creation of spin polarization in silicon at room temperature SP Dash, S Sharma, RS Patel, MP De Jong, R Jansen; Nature 462, 491 (2009).2. Oscillatory spin-polarized tunnelling from silicon quantum wells controlled by electric field R Jansen, BC Min, SP Dash; Nature Materials 9, 133 (2010).3. Long distance spin communication in chemical vapour deposited graphene. V K Mutta, G. Chris, A Dankert, SP Dash; Nature Communication, 6, 6766 (2015).

Source: chalmers.se

Projects

2013–2016

Silicon Spintronics at Room Temperature

Saroj Prasad Dash Department of Microtechnology and Nanoscience, Quantum Device Physics
Venkata Kamalakar Mutta Department of Microtechnology and Nanoscience, Quantum Device Physics
André Dankert Department of Microtechnology and Nanoscience, Quantum Device Physics
Swedish Research Council (VR)

2012–2016

Silicon Spintronics at Room Temperature (SILICONSPIN)

Saroj Prasad Dash Department of Microtechnology and Nanoscience, Quantum Device Physics
Venkata Kamalakar Mutta Department of Microtechnology and Nanoscience, Quantum Device Physics
André Dankert Department of Microtechnology and Nanoscience, Quantum Device Physics
EC, Seventh Framework program (FP7)

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Publications

2017

Spintronics with Graphene and van der Waals Heterostructures

Saroj Prasad Dash, Venkata Kamalakar Mutta, André Dankert et al
World Scientific, p. 241-258
Chapter in monograph, book - popular science
2016

Spin transport in two-dimensional materials and van der Waals heterostructures

Saroj Prasad Dash,
2016 Ieee 16th International Conference on Nanotechnology (Ieee-Nano), p. 986-986
Conference paper - peer reviewed
2016

Inversion of Spin Signal and Spin Filtering in Ferromagnet| Hexagonal Boron Nitride-Graphene van der Waals Heterostructures

Venkata Kamalakar Mutta, André Dankert, Paul Kelly et al
Scientific Reports. Vol. 6, p. 21168
Scientific journal article - peer reviewed
2016

Cold cathode emission studies on topographically modified few layer and single layer MoS2 films

A.P.S. Gaur, S. Sahoo, F. Mendoza et al
Applied Physics Letters. Vol. 108, p. 043103
Scientific journal article - peer reviewed
2015

Room Temperature Electrical Detection of Spin Polarized Currents in Topological Insulators

André Dankert, Johannes Geurs, Venkata Kamalakar Mutta et al
Nano letters. Vol. 15 (12), p. 7976-7981
Scientific journal article - peer reviewed
2015

Effect of high-k dielectric and ionic liquid gate on nanolayer black-phosphorus field effect transistors

Venkata Kamalakar Mutta, B. N. Madhushankar, André Dankert et al
Applied Physics Letters. Vol. 107 (11), p. 113103
Scientific journal article - peer reviewed
2015

Graphene spintronics: the European Flagship perspective

Stefan Roche, Johan Åkerman, Bernd Beschoten et al
2D Materials. Vol. 2 (3), p. 030202
Scientific journal article - peer reviewed
2015

Long distance spin communication in chemical vapour deposited graphene

Venkata Kamalakar Mutta, Christiaan Groenveld, André Dankert et al
Nature Communications. Vol. 6, p. 6766
Scientific journal article - peer reviewed
2015

Low Schottky Barrier Black Phosphorus Field-Effect Devices with Ferromagnetic Tunnel Contacts

Venkata Kamalakar Mutta, B. N. Madhushankar, André Dankert et al
Small. Vol. 11 (18), p. 2209-2216
Scientific journal article - peer reviewed
2015

Tunnel Magnetoresistance with Atomically Thin Two‐Dimensional Hexagonal Boron Nitride Barriers

André Dankert, Venkata Kamalakar Mutta, Abdul Wajid et al
Nano Research. Vol. 8 (4), p. 1357-1364
Scientific journal article - peer reviewed
2014

Spintronics with graphene-hexagonal boron nitride van der Waals heterostructures

Venkata Kamalakar Mutta, André Dankert, Johan Bergsten et al
Applied Physics Letters. Vol. 105 (212405)
Scientific journal article - peer reviewed
2014

Enhanced Tunnel Spin Injection into Graphene using Chemical Vapor Deposited Hexagonal Boron Nitride

Venkata Kamalakar Mutta, André Dankert, Johan Bergsten et al
Scientific Reports. Vol. 4, p. Art. no. 6146
Scientific journal article - peer reviewed
2014

Surface Energy Engineering for Tunable Wettability through Controlled Synthesis of MoS2

A.P.S. Gaur, S. Sahoo, M. Ahmadi et al
Nano letters. Vol. 14 (8), p. 4314-4321
Scientific journal article - peer reviewed
2014

Electric field effects on spin accumulation in Nb-doped SrTiO3 using tunable spin injection contacts at room temperature

Saroj Prasad Dash, A. M. Kamerbeek, E. K. de Vries et al
Applied Physics Letters. Vol. 104 (21)
Scientific journal article - peer reviewed
2014

Spin transport and precession in graphene measured by nonlocal and three-terminal methods

André Dankert, Venkata Kamalakar Mutta, Saroj Prasad Dash et al
Applied Physics Letters. Vol. 104 (19), p. 192403
Scientific journal article - peer reviewed
2014

Anomalous scaling of spin accumulation in ferromagnetic tunnel devices with silicon and germanium

S. Sharma, A. Spiesser, Saroj Prasad Dash et al
Physical Review B. Condensed Matter and Materials Physics. Vol. 89 (7)
Scientific journal article - peer reviewed
2014

High Performance Molybdenum Disulfide Field Effect Transistors with Spin Tunnel Contacts

André Dankert, Lennart Langouche, Venkata Kamalakar Mutta et al
ACS Nano. Vol. 8 (1), p. 476-482
Scientific journal article - peer reviewed
2013

Thermal creation of electron spin polarization in n-type silicon

André Dankert, Saroj Prasad Dash,
Applied Physics Letters. Vol. 103 (24), p. article nr. 242405
Scientific journal article - peer reviewed
2013

Efficient Spin Injection into Silicon and the Role of the Schottky Barrier

André Dankert, Dulal Ravi Sharma, Saroj Prasad Dash et al
Scientific Reports. Vol. 3
Scientific journal article - peer reviewed
2012

Anisotropy of spin polarization and spin accumulation in Si/Al2O3/ferromagnet tunnel devices

S. Sharma, Saroj Prasad Dash, H. Saito et al
Physical Review B. Vol. 86 (16)
Scientific journal article - peer reviewed
2012

Silicon spintronics with ferromagnetic tunnel devices

R. Jansen, Saroj Prasad Dash, S. Sharma et al
Semiconductor Science and Technology. Vol. 27 (8)
Scientific journal article - peer reviewed
2012

Tunnel Contacts for Spin Injection into Silicon: The Si-Co Interface with and without a MgO Tunnel Barrier - A Study by High-Resolution Rutherford Backscattering

Saroj Prasad Dash, D. Goll, P. Kopold et al
Advances in Materials Science and Engineering. Vol. 2012, p. Art. no. 902649
Scientific journal article - peer reviewed
2011

24. Initial stages of growth of iron on silicon for spin injection through Schottky barrier

Saroj Prasad Dash, H.D. Carstanjen,
Physica status solidi. B, Basic research. Vol. 248, p. 2300
Scientific journal article - peer reviewed
2011

A transfer technique for high mobility graphene devices on commercially available hexagonal boron nitride

Saroj Prasad Dash,
Applied Physics Letters
Scientific journal article - peer reviewed
2011

Initial stages of growth of iron on silicon for spin injection through Schottky barrier

Saroj Prasad Dash, H. D. Carstanjen,
Physica Status Solidi B - Basic Solid State Physics. Vol. 248 (10), p. 2300-2304
Scientific journal article - peer reviewed
2011

Spin precession and inverted Hanle effect in a semiconductor near a finite-roughness ferromagnetic interface

Saroj Prasad Dash, S. Sharma, J. C. Le Breton et al
Physical Review B. Vol. 84 (5)
Scientific journal article - peer reviewed
2010

19. Electrical spin injection into moderately doped silicon enabled by tailored interfaces

R. Jansen, B.C. Min, Saroj Prasad Dash et al
Physical Review B. Condensed Matter and Materials Physics. Vol. 82 (24), p. 241305
Scientific journal article - peer reviewed
2010

Silicon spintronics at room temperature

Saroj Prasad Dash, S. Sharma, J.C. Le Breton et al
Proceedings of SPIE, the International Society for Optical Engineering. Vol. 7760 (77600J)
Scientific journal article - peer reviewed
2010

Oscillatory spin-polarized tunnelling from silicon quantum wells controlled by electric field

Saroj Prasad Dash,
Nature Materials
Scientific journal article - peer reviewed
2009

21. Magnetic tunnel contacts to silicon with low-work-function ytterbium nanolayers

R.S. Patel, Saroj Prasad Dash, M.P. de Jong et al
Journal of Applied Physics. Vol. 106 (1), p. 016107
Scientific journal article - peer reviewed
2009

23. Near-surface compositional oscillations of Co diffused into Si (100) at-60° C: a study by high-resolution Rutherford backscattering

Saroj Prasad Dash, D. Goll, H.D. Carstanjen et al
Applied Physics A: Materials Science & Processing. Vol. 97 (3), p. 651
Scientific journal article - peer reviewed
2009

Electrical creation of spin polarization in silicon at room temperature

Saroj Prasad Dash,
Nature
Scientific journal article - peer reviewed
2007

26. Subsurface enrichment of Co in Si (100) at initial stages of growth at room temperature

Saroj Prasad Dash, D. Goll, H.D. Carstanjen et al
Applied Physics Letters. Vol. 90, p. 132109
Scientific journal article - peer reviewed