Saroj Dash is leading a research group on Quantum device Physics, Nanoelectronics and Spintronics research at Chalmers. He holds a PhD degree in Physics from Max Planck Institute (2007, Stuttgart, Germany). His previous positions include postdocs at Uni. of Twente and Uni. of Groningen in Netherlands for three years. He was appointed at Chalmers in November 2010, where his group focus is on electronic charge and spin transport in graphene, semiconductor nanostructures, other two-dimensional materials and topological insulators. His group develops novel approaches for nanofabrication and design new measurement techniques that lead to fundamental physics experiments. The goal is to exploit spin degree of freedom of electrons for integration of memory and logic functionalities in nanoelectronic devices. Research interests –1. Graphene nanoelectronics and spintronics2. van der Waals heterostructures of 2D materials3. 2D semiconductors for electronics and spintronics4. Spin transport in silicon devices.5. Topological Insulators for spintronic devices.Major publications 1. Electrical creation of spin polarization in silicon at room temperature SP Dash, S Sharma, RS Patel, MP De Jong, R Jansen; Nature 462, 491 (2009).2. Oscillatory spin-polarized tunnelling from silicon quantum wells controlled by electric field R Jansen, BC Min, SP Dash; Nature Materials 9, 133 (2010).3. Long distance spin communication in chemical vapour deposited graphene. V K Mutta, G. Chris, A Dankert, SP Dash; Nature Communication, 6, 6766 (2015).