Saroj Prasad Dash

Docent at Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Saroj Dash is leading a research group on Quantum device Physics, Nanoelectronics and Spintronics research at Chalmers. He holds a PhD degree in Physics from Max Planck Institute (2007, Stuttgart, Germany). His previous positions include postdocs at Uni. of Twente and Uni. of Groningen in Netherlands for three years. He was appointed at Chalmers in November 2010, where his group focus is on electronic charge and spin transport in graphene, semiconductor nanostructures, other two-dimensional materials and topological insulators. His group develops novel approaches for nanofabrication and design new measurement techniques that lead to fundamental physics experiments. The goal is to exploit spin degree of freedom of electrons for integration of memory and logic functionalities in nanoelectronic devices. Research interests1. Graphene nanoelectronics and spintronics2. van der Waals heterostructures of 2D materials3. 2D semiconductors for electronics and spintronics4. Spin transport in silicon devices5. Topological Insulators for spintronic devicesRead about the different master thesis projects (30 or 60 credits) available in the Saroj Dash Group at the Teaching tab.

Source: chalmers.se

Projects

2016–2018

Graphene Core1. Graphene-based disruptive technologies (Graphene Flagship)

Jari Kinaret Condensed Matter Theory
Sergey Kubatkin Quantum Device Physics
Saroj Prasad Dash Quantum Device Physics
Jan Stake Terahertz and Millimetre Wave Laboratory
Herbert Zirath Microwave Electronics
European Commission (Horizon 2020)

2013–2016

Silicon Spintronics at Room Temperature

Saroj Prasad Dash Quantum Device Physics
Venkata Kamalakar Mutta Quantum Device Physics
André Dankert Quantum Device Physics
Swedish Research Council (VR)

2012–2016

Silicon Spintronics at Room Temperature (SILICONSPIN)

Saroj Prasad Dash Quantum Device Physics
Venkata Kamalakar Mutta Quantum Device Physics
André Dankert Quantum Device Physics
European Commission (FP7)

There might be more projects where Saroj Prasad Dash participates, but you have to be logged in as a Chalmers employee to see them.

Publications

2018

1D ferromagnetic edge contacts to 2D graphene/h-BN heterostructures

Bogdan Karpiak, André Dankert, A. W. Cummings et al
2D Materials. Vol. 5 (1), p. 014001-
Magazine article
2017

Spintronics with Graphene and van der Waals Heterostructures

Saroj Prasad Dash, Venkata Kamalakar Mutta, André Dankert
World Scientific, p. 241-258
Chapter in monograph, book - popular science
2017

Gate-tunable Hall sensors on large area CVD graphene protected by h-BN with 1D edge contacts

Bogdan Karpiak, André Dankert, Saroj Prasad Dash
Journal of Applied Physics. Vol. 122 (5), p. Article no 054506 -
Journal article
2017

Electrical gate control of spin current in van der Waals heterostructures at room temperature

André Dankert, Saroj Prasad Dash
Nature Communications. Vol. 8, p. Article no 16093 -
Journal article
2017

Spin-Polarized Tunneling through Chemical Vapor Deposited Multilayer Molybdenum Disulfide

André Dankert, Parham Pashaei, Venkata Kamalakar Mutta et al
ACS Nano. Vol. 11 (6), p. 6389-6395
Journal article
2016

Spin transport in two-dimensional materials and van der Waals heterostructures

Saroj Prasad Dash
2016 Ieee 16th International Conference on Nanotechnology (Ieee-Nano), p. 986-986
Paper in proceedings
2016

Inversion of Spin Signal and Spin Filtering in Ferromagnet| Hexagonal Boron Nitride-Graphene van der Waals Heterostructures

Venkata Kamalakar Mutta, André Dankert, Paul Kelly et al
Scientific Reports. Vol. 6, p. 21168-
Journal article
2016

Cold cathode emission studies on topographically modified few layer and single layer MoS2 films

A.P.S. Gaur, S. Sahoo, F. Mendoza et al
Applied Physics Letters. Vol. 108 (4), p. 043103-
Journal article
2015

Low Schottky Barrier Black Phosphorus Field-Effect Devices with Ferromagnetic Tunnel Contacts

Venkata Kamalakar Mutta, B. N. Madhushankar, André Dankert et al
Small. Vol. 11 (18), p. 2209-2216
Journal article
2015

Effect of high-k dielectric and ionic liquid gate on nanolayer black-phosphorus field effect transistors

Venkata Kamalakar Mutta, B. N. Madhushankar, André Dankert et al
Applied Physics Letters. Vol. 107 (11), p. 113103-
Journal article
2015

Room Temperature Electrical Detection of Spin Polarized Currents in Topological Insulators

André Dankert, Johannes Geurs, Venkata Kamalakar Mutta et al
Nano Letters. Vol. 15 (12), p. 7976-7981
Journal article
2015

Graphene spintronics: the European Flagship perspective

Stefan Roche, Johan Åkerman, Bernd Beschoten et al
2D Materials. Vol. 2 (3), p. 030202-
Journal article
2015

Tunnel Magnetoresistance with Atomically Thin Two‚ÄźDimensional Hexagonal Boron Nitride Barriers

André Dankert, Venkata Kamalakar Mutta, Abdul Wajid et al
Nano Research. Vol. 8 (4), p. 1357-1364
Journal article
2015

Long distance spin communication in chemical vapour deposited graphene

Venkata Kamalakar Mutta, Christiaan Groenveld, André Dankert et al
Nature Communications. Vol. 6, p. 6766-
Journal article
2014

Spin transport and precession in graphene measured by nonlocal and three-terminal methods

André Dankert, Venkata Kamalakar Mutta, Saroj Prasad Dash et al
Applied Physics Letters. Vol. 104 (19), p. 192403 -
Journal article
2014

Electric field effects on spin accumulation in Nb-doped SrTiO3 using tunable spin injection contacts at room temperature

Saroj Prasad Dash, A. M. Kamerbeek, André Dankert et al
Applied Physics Letters. Vol. 104 (21)
Journal article
2014

Anomalous scaling of spin accumulation in ferromagnetic tunnel devices with silicon and germanium

S. Sharma, A. Spiesser, Saroj Prasad Dash et al
Physical Review B - Condensed Matter and Materials Physics. Vol. 89 (7)
Journal article
2014

Spintronics with graphene-hexagonal boron nitride van der Waals heterostructures

Venkata Kamalakar Mutta, André Dankert, Johan Bergsten et al
Applied Physics Letters. Vol. 105 (212405)
Journal article
2014

High Performance Molybdenum Disulfide Field Effect Transistors with Spin Tunnel Contacts

André Dankert, Lennart Langouche, Venkata Kamalakar Mutta et al
ACS Nano. Vol. 8 (1), p. 476-482
Journal article
2014

Enhanced Tunnel Spin Injection into Graphene using Chemical Vapor Deposited Hexagonal Boron Nitride

Venkata Kamalakar Mutta, André Dankert, Johan Bergsten et al
Scientific Reports. Vol. 4, p. Art. no. 6146-
Journal article
2014

Surface Energy Engineering for Tunable Wettability through Controlled Synthesis of MoS2

A.P.S. Gaur, S. Sahoo, M. Ahmadi et al
Nano Letters. Vol. 14 (8), p. 4314-4321
Journal article
2013

Thermal creation of electron spin polarization in n-type silicon

André Dankert, Saroj Prasad Dash
Applied Physics Letters. Vol. 103 (24), p. article nr. 242405-
Journal article
2013

Efficient Spin Injection into Silicon and the Role of the Schottky Barrier

André Dankert, Dulal Ravi Sharma, Saroj Prasad Dash
Scientific Reports. Vol. 3
Journal article
2012

Silicon spintronics with ferromagnetic tunnel devices

R. Jansen, Saroj Prasad Dash, S. Sharma et al
Semiconductor Science and Technology. Vol. 27 (8)
Journal article
2012

Tunnel Contacts for Spin Injection into Silicon: The Si-Co Interface with and without a MgO Tunnel Barrier - A Study by High-Resolution Rutherford Backscattering

Saroj Prasad Dash, D. Goll, P. Kopold et al
Advances in Materials Science and Engineering. Vol. 2012, p. Art. no. 902649-
Journal article
2012

Anisotropy of spin polarization and spin accumulation in Si/Al2O3/ferromagnet tunnel devices

S. Sharma, Saroj Prasad Dash, H. Saito et al
Physical Review B - Condensed Matter and Materials Physics. Vol. 86 (16)
Journal article
2011

24. Initial stages of growth of iron on silicon for spin injection through Schottky barrier

Saroj Prasad Dash, H.D. Carstanjen
Physica Status Solidi (B): Basic Research. Vol. 248, p. 2300-
Journal article
2011

Initial stages of growth of iron on silicon for spin injection through Schottky barrier

Saroj Prasad Dash, H. D. Carstanjen
Physica Status Solidi (B): Basic Research. Vol. 248 (10), p. 2300-2304
Journal article
2011

Spin precession and inverted Hanle effect in a semiconductor near a finite-roughness ferromagnetic interface

Saroj Prasad Dash, S. Sharma, J. C. Le Breton et al
Physical Review B - Condensed Matter and Materials Physics. Vol. 84 (5)
Journal article
2010

Silicon spintronics at room temperature

Saroj Prasad Dash, S. Sharma, J.C. Le Breton et al
Journal of Logic and Computation. Vol. 7760 (77600J)
Journal article
2010

19. Electrical spin injection into moderately doped silicon enabled by tailored interfaces

R. Jansen, B.C. Min, Saroj Prasad Dash et al
Physical Review B - Condensed Matter and Materials Physics. Vol. 82 (24), p. 241305-
Journal article
2009

21. Magnetic tunnel contacts to silicon with low-work-function ytterbium nanolayers

R.S. Patel, Saroj Prasad Dash, M.P. de Jong et al
Journal of Applied Physics. Vol. 106 (1), p. 016107-
Journal article
2009

23. Near-surface compositional oscillations of Co diffused into Si (100) at-60° C: a study by high-resolution Rutherford backscattering

Saroj Prasad Dash, D. Goll, H.D. Carstanjen
Applied Physics A: Materials Science and Processing. Vol. 97 (3), p. 651-
Journal article
2009

Electrical creation of spin polarization in silicon at room temperature

Saroj Prasad Dash
Nature
Journal article
2007

26. Subsurface enrichment of Co in Si (100) at initial stages of growth at room temperature

Saroj Prasad Dash, D. Goll, H.D. Carstanjen
Applied Physics Letters. Vol. 90, p. 132109-
Journal article