Anisotropy of spin polarization and spin accumulation in Si/Al2O3/ferromagnet tunnel devices
Journal article, 2012

The contribution of the spin accumulation to tunneling anisotropy in Si/Al2O3/ferromagnet devices was investigated. Rotation of the magnetization of the ferromagnet from in-plane to perpendicular to the tunnel interface reveals a tunneling anisotropy that depends on the type of the ferromagnet (Fe or Ni) and on the doping of the Si (n or p type). Analysis shows that different contributions to the anisotropy coexist. Besides the regular tunneling anisotropic magnetoresistance, we identify a contribution due to anisotropy of the tunnel spin polarization of the oxide/ferromagnet interface. This causes the spin accumulation to be anisotropic, i.e., dependent on the absolute orientation of the magnetization of the ferromagnet.




S. Sharma

Saroj Prasad Dash

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

H. Saito

S. Yuasa

B. J. van Wees

R. Jansen

Physical Review B - Condensed Matter and Materials Physics

1098-0121 (ISSN)

Vol. 86 16

Subject Categories

Physical Sciences



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