High Performance Molybdenum Disulfide Field Effect Transistors with Spin Tunnel Contacts
Journal article, 2014

Molybdenum disulfide has recently emerged as a promising two-dimensional semiconducting material for nanoelectronic, optoelectronic, and spintronic applications. Here, we investigate the field-effect transistor behavior of MoS2 with ferromagnetic contacts to explore its potential for spintronics. In such devices, we elucidate that the presence of a large Schottky barrier resistance at the MoS2/ferromagnet interface is a major obstacle for the electrical spin injection and detection. We circumvent this problem by a reduction in the Schottky barrier height with the introduction of a thin TiO2 tunnel barrier between the ferromagnet and MoS 2. This results in an enhancement of the transistor on-state current by 2 orders of magnitude and an increment in the field-effect mobility by a factor of 6. Our magnetoresistance calculation reveals that such integration of ferromagnetic tunnel contacts opens up the possibilities for MoS 2-based spintronic devices.

Author

André Dankert

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Lennart Langouche

Chalmers, Microtechnology and Nanoscience (MC2)

Venkata Kamalakar Mutta

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Saroj Prasad Dash

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

ACS Nano

1936-0851 (ISSN) 1936-086X (eISSN)

Vol. 8 1 476-482

Areas of Advance

Nanoscience and Nanotechnology (2010-2017)

Subject Categories

Physical Sciences

Nano Technology

DOI

10.1021/nn404961e

More information

Created

10/7/2017