High Performance Molybdenum Disulfide Field Effect Transistors with Spin Tunnel Contacts
Artikel i vetenskaplig tidskrift, 2014

Molybdenum disulfide has recently emerged as a promising two-dimensional semiconducting material for nanoelectronic, optoelectronic, and spintronic applications. Here, we investigate the field-effect transistor behavior of MoS2 with ferromagnetic contacts to explore its potential for spintronics. In such devices, we elucidate that the presence of a large Schottky barrier resistance at the MoS2/ferromagnet interface is a major obstacle for the electrical spin injection and detection. We circumvent this problem by a reduction in the Schottky barrier height with the introduction of a thin TiO2 tunnel barrier between the ferromagnet and MoS 2. This results in an enhancement of the transistor on-state current by 2 orders of magnitude and an increment in the field-effect mobility by a factor of 6. Our magnetoresistance calculation reveals that such integration of ferromagnetic tunnel contacts opens up the possibilities for MoS 2-based spintronic devices.

Författare

André Dankert

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Lennart Langouche

Chalmers, Mikroteknologi och nanovetenskap (MC2)

Venkata Kamalakar Mutta

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Saroj Prasad Dash

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

ACS Nano

1936-0851 (ISSN) 1936-086X (eISSN)

Vol. 8 1 476-482

Styrkeområden

Nanovetenskap och nanoteknik

Ämneskategorier

Fysik

Nanoteknik

DOI

10.1021/nn404961e

Mer information

Skapat

2017-10-07