Saroj Prasad Dash

Docent vid Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Visar 41 publikationer

2018

Tailoring emergent spin phenomena in Dirac material heterostructures

Dmitrii Khokhriakov, Aron W. Cummings, Kenan Song et al
Science advances. Vol. 4 (9)
Artikel i vetenskaplig tidskrift
2018

Origin and evolution of surface spin current in topological insulators

André Dankert, Priyamvada Bhaskar, Dmitrii Khokhriakov et al
Physical Review B. Vol. 97 (12)
Artikel i vetenskaplig tidskrift
2018

1D ferromagnetic edge contacts to 2D graphene/h-BN heterostructures

Bogdan Karpiak, André Dankert, A. W. Cummings et al
2D Materials. Vol. 5 (1), p. 014001-
Artikel i vetenskaplig tidskrift
2018

Detection of the interfacial exchange field at a ferromagnetic insulator-nonmagnetic metal interface with pure spin currents

P. K. Muduli, M. Kimata, Y. Omori et al
PHYSICAL REVIEW B. Vol. 98 (2)
Artikel i vetenskaplig tidskrift
2017

Hall sensors batch-fabricated on all-CVD h-BN/graphene/h-BN heterostructures

André Dankert, Bogdan Karpiak, Saroj Prasad Dash
Scientific Reports. Vol. 7
Artikel i vetenskaplig tidskrift
2017

Spintronics with Graphene and van der Waals Heterostructures

Saroj Prasad Dash, Venkata Kamalakar Mutta, André Dankert
World Scientific, p. 241-258
Kapitel, populärvetenskapligt
2017

Gate-tunable Hall sensors on large area CVD graphene protected by h-BN with 1D edge contacts

Bogdan Karpiak, André Dankert, Saroj Prasad Dash
Journal of Applied Physics. Vol. 122 (5), p. Article no 054506 -
Artikel i vetenskaplig tidskrift
2017

Electrical gate control of spin current in van der Waals heterostructures at room temperature

André Dankert, Saroj Prasad Dash
Nature Communications. Vol. 8, p. Article no 16093 -
Artikel i vetenskaplig tidskrift
2017

Spin-Polarized Tunneling through Chemical Vapor Deposited Multilayer Molybdenum Disulfide

André Dankert, Parham Pashaei, Venkata Kamalakar Mutta et al
ACS Nano. Vol. 11 (6), p. 6389-6395
Artikel i vetenskaplig tidskrift
2016

Spin transport in two-dimensional materials and van der Waals heterostructures

Saroj Prasad Dash
2016 Ieee 16th International Conference on Nanotechnology (Ieee-Nano), p. 986-986
Paper i proceeding
2016

Inversion of Spin Signal and Spin Filtering in Ferromagnet| Hexagonal Boron Nitride-Graphene van der Waals Heterostructures

Venkata Kamalakar Mutta, André Dankert, Paul Kelly et al
Scientific Reports. Vol. 6, p. 21168-
Artikel i vetenskaplig tidskrift
2016

Cold cathode emission studies on topographically modified few layer and single layer MoS2 films

A.P.S. Gaur, S. Sahoo, F. Mendoza et al
Applied Physics Letters. Vol. 108 (4), p. 043103-
Artikel i vetenskaplig tidskrift
2015

Low Schottky Barrier Black Phosphorus Field-Effect Devices with Ferromagnetic Tunnel Contacts

Venkata Kamalakar Mutta, B. N. Madhushankar, André Dankert et al
Small. Vol. 11 (18), p. 2209-2216
Artikel i vetenskaplig tidskrift
2015

Effect of high-k dielectric and ionic liquid gate on nanolayer black-phosphorus field effect transistors

Venkata Kamalakar Mutta, B. N. Madhushankar, André Dankert et al
Applied Physics Letters. Vol. 107 (11), p. 113103-
Artikel i vetenskaplig tidskrift
2015

Room Temperature Electrical Detection of Spin Polarized Currents in Topological Insulators

André Dankert, Johannes Geurs, Venkata Kamalakar Mutta et al
Nano Letters. Vol. 15 (12), p. 7976-7981
Artikel i vetenskaplig tidskrift
2015

Graphene spintronics: the European Flagship perspective

Stefan Roche, Johan Åkerman, Bernd Beschoten et al
2D Materials. Vol. 2 (3), p. 030202-
Artikel i vetenskaplig tidskrift
2015

Tunnel Magnetoresistance with Atomically Thin Two‐Dimensional Hexagonal Boron Nitride Barriers

André Dankert, Venkata Kamalakar Mutta, Abdul Wajid et al
Nano Research. Vol. 8 (4), p. 1357-1364
Artikel i vetenskaplig tidskrift
2015

Long distance spin communication in chemical vapour deposited graphene

Venkata Kamalakar Mutta, Christiaan Groenveld, André Dankert et al
Nature Communications. Vol. 6, p. 6766-
Artikel i vetenskaplig tidskrift
2014

Spin transport and precession in graphene measured by nonlocal and three-terminal methods

André Dankert, Venkata Kamalakar Mutta, Saroj Prasad Dash et al
Applied Physics Letters. Vol. 104 (19), p. 192403 -
Artikel i vetenskaplig tidskrift
2014

Electric field effects on spin accumulation in Nb-doped SrTiO3 using tunable spin injection contacts at room temperature

Saroj Prasad Dash, A. M. Kamerbeek, André Dankert et al
Applied Physics Letters. Vol. 104 (21)
Artikel i vetenskaplig tidskrift
2014

Anomalous scaling of spin accumulation in ferromagnetic tunnel devices with silicon and germanium

S. Sharma, A. Spiesser, Saroj Prasad Dash et al
Physical Review B - Condensed Matter and Materials Physics. Vol. 89 (7)
Artikel i vetenskaplig tidskrift
2014

Spintronics with graphene-hexagonal boron nitride van der Waals heterostructures

Venkata Kamalakar Mutta, André Dankert, Johan Bergsten et al
Applied Physics Letters. Vol. 105 (212405)
Artikel i vetenskaplig tidskrift
2014

High Performance Molybdenum Disulfide Field Effect Transistors with Spin Tunnel Contacts

André Dankert, Lennart Langouche, Venkata Kamalakar Mutta et al
ACS Nano. Vol. 8 (1), p. 476-482
Artikel i vetenskaplig tidskrift
2014

Enhanced Tunnel Spin Injection into Graphene using Chemical Vapor Deposited Hexagonal Boron Nitride

Venkata Kamalakar Mutta, André Dankert, Johan Bergsten et al
Scientific Reports. Vol. 4, p. Art. no. 6146-
Artikel i vetenskaplig tidskrift
2014

Surface Energy Engineering for Tunable Wettability through Controlled Synthesis of MoS2

A.P.S. Gaur, S. Sahoo, M. Ahmadi et al
Nano Letters. Vol. 14 (8), p. 4314-4321
Artikel i vetenskaplig tidskrift
2013

Thermal creation of electron spin polarization in n-type silicon

André Dankert, Saroj Prasad Dash
Applied Physics Letters. Vol. 103 (24), p. article nr. 242405-
Artikel i vetenskaplig tidskrift
2013

Efficient Spin Injection into Silicon and the Role of the Schottky Barrier

André Dankert, Dulal Ravi Sharma, Saroj Prasad Dash
Scientific Reports. Vol. 3
Artikel i vetenskaplig tidskrift
2012

Silicon spintronics with ferromagnetic tunnel devices

R. Jansen, Saroj Prasad Dash, S. Sharma et al
Semiconductor Science and Technology. Vol. 27 (8)
Artikel i vetenskaplig tidskrift
2012

Tunnel Contacts for Spin Injection into Silicon: The Si-Co Interface with and without a MgO Tunnel Barrier - A Study by High-Resolution Rutherford Backscattering

Saroj Prasad Dash, D. Goll, P. Kopold et al
Advances in Materials Science and Engineering. Vol. 2012, p. Art. no. 902649-
Artikel i vetenskaplig tidskrift
2012

Anisotropy of spin polarization and spin accumulation in Si/Al2O3/ferromagnet tunnel devices

S. Sharma, Saroj Prasad Dash, H. Saito et al
Physical Review B - Condensed Matter and Materials Physics. Vol. 86 (16)
Artikel i vetenskaplig tidskrift
2011

24. Initial stages of growth of iron on silicon for spin injection through Schottky barrier

Saroj Prasad Dash, H.D. Carstanjen
Physica Status Solidi (B): Basic Research. Vol. 248, p. 2300-
Artikel i vetenskaplig tidskrift
2011

Initial stages of growth of iron on silicon for spin injection through Schottky barrier

Saroj Prasad Dash, H. D. Carstanjen
Physica Status Solidi (B): Basic Research. Vol. 248 (10), p. 2300-2304
Artikel i vetenskaplig tidskrift
2011

A transfer technique for high mobility graphene devices on commercially available hexagonal boron nitride

Saroj Prasad Dash
Applied Physics Letters
Artikel i vetenskaplig tidskrift
2011

Spin precession and inverted Hanle effect in a semiconductor near a finite-roughness ferromagnetic interface

Saroj Prasad Dash, S. Sharma, J. C. Le Breton et al
Physical Review B - Condensed Matter and Materials Physics. Vol. 84 (5)
Artikel i vetenskaplig tidskrift
2010

Silicon spintronics at room temperature

Saroj Prasad Dash, S. Sharma, J.C. Le Breton et al
Proceedings of SPIE, the International Society for Optical Engineering. Vol. 7760 (77600J)
Artikel i vetenskaplig tidskrift
2010

19. Electrical spin injection into moderately doped silicon enabled by tailored interfaces

R. Jansen, B.C. Min, Saroj Prasad Dash et al
Physical Review B - Condensed Matter and Materials Physics. Vol. 82 (24), p. 241305-
Artikel i vetenskaplig tidskrift
2010

Oscillatory spin-polarized tunnelling from silicon quantum wells controlled by electric field

Saroj Prasad Dash
Nature Materials
Artikel i vetenskaplig tidskrift
2009

21. Magnetic tunnel contacts to silicon with low-work-function ytterbium nanolayers

R.S. Patel, Saroj Prasad Dash, M.P. de Jong et al
Journal of Applied Physics. Vol. 106 (1), p. 016107-
Artikel i vetenskaplig tidskrift
2009

23. Near-surface compositional oscillations of Co diffused into Si (100) at-60° C: a study by high-resolution Rutherford backscattering

Saroj Prasad Dash, D. Goll, H.D. Carstanjen
Applied Physics A: Materials Science and Processing. Vol. 97 (3), p. 651-
Artikel i vetenskaplig tidskrift
2009

Electrical creation of spin polarization in silicon at room temperature

Saroj Prasad Dash
Nature
Artikel i vetenskaplig tidskrift
2007

26. Subsurface enrichment of Co in Si (100) at initial stages of growth at room temperature

Saroj Prasad Dash, D. Goll, H.D. Carstanjen
Applied Physics Letters. Vol. 90, p. 132109-
Artikel i vetenskaplig tidskrift

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Visar 3 forskningsprojekt

2016–2018

Graphene Core1. Graphene-based disruptive technologies (Graphene Flagship)

Saroj Prasad Dash Kvantkomponentfysik
Herbert Zirath Mikrovågselektronik
Sergey Kubatkin Kvantkomponentfysik
Jan Stake Terahertz- och millimetervågsteknik
Jari Kinaret Kondenserade materiens teori
Europeiska kommissionen (Horisont 2020)

2013–2022

Kiselspintronik vid rumstemperatur

Saroj Prasad Dash Kvantkomponentfysik
Venkata Kamalakar Mutta Kvantkomponentfysik
André Dankert Kvantkomponentfysik
Vetenskapsrådet (VR)

2012–2022

Silicon Spintronics at Room Temperature (SILICONSPIN)

Saroj Prasad Dash Kvantkomponentfysik
Venkata Kamalakar Mutta Kvantkomponentfysik
André Dankert Kvantkomponentfysik
Europeiska kommissionen (FP7)

Det kan finnas fler projekt där Saroj Prasad Dash medverkar, men du måste vara inloggad som anställd på Chalmers för att kunna se dem.