Transfer of 2D Films: From Imperfection to Perfection
Reviewartikel, 2024

Atomically thin 2D films and their van der Waals heterostructures have demonstrated immense potential for breakthroughs and innovations in science and technology. Integrating 2D films into electronics and optoelectronics devices and their applications in electronics and optoelectronics can lead to improve device efficiencies and tunability. Consequently, there has been steady progress in large-area 2D films for both front- and back-end technologies, with a keen interest in optimizing different growth and synthetic techniques. Parallelly, a significant amount of attention has been directed toward efficient transfer techniques of 2D films on different substrates. Current methods for synthesizing 2D films often involve high-temperature synthesis, precursors, and growth stimulants with highly chemical reactivity. This limitation hinders the widespread applications of 2D films. As a result, reports concerning transfer strategies of 2D films from bare substrates to target substrates have proliferated, showcasing varying degrees of cleanliness, surface damage, and material uniformity. This review aims to evaluate, discuss, and provide an overview of the most advanced transfer methods to date, encompassing wet, dry, and quasi-dry transfer methods. The processes, mechanisms, and pros and cons of each transfer method are critically summarized. Furthermore, we discuss the feasibility of these 2D film transfer methods, concerning their applications in devices and various technology platforms.

2D films

transfer process

wet transfer

chemical vapor deposition

2D materials

dry transfer

transfer technology

quasi-dry transfer


Phuong V. Pham

National Sun Yat-Sen University

The Hung Mai

National Sun Yat-Sen University

Saroj Prasad Dash

Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik

Vasudevanpillai Biju

Hokkaido University

Yu Lun Chueh

National Tsing Hua University

Deep Jariwala

School of Engineering and Applied Science

Vincent Tung

University of Tokyo

ACS Nano

1936-0851 (ISSN) 1936-086X (eISSN)

Vol. 18 23 14841-14876





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