Gate-tunable negative differential resistance in multifunctional van der Waals heterostructure
Artikel i vetenskaplig tidskrift, 2026
Two-dimensional (2D) semiconductors have emerged as exciting candidates for the development of low-power and multifunctional computing applications, thanks to their qualities such as layer-dependent band gap tunability, high carrier mobility, and excellent electrostatic control. Here, we explore a pair of 2D semiconductors with nearly broken-gap (Type-III-like) band alignment and demonstrate a highly gate-tunable p-MoTe2 /n-SnS2 heterojunction with multifunctional behavior. Employing a dual-gated asymmetric device geometry, we unveil its functionality as both a forward and backward rectifying device. Moreover, we observe a highly gate-tunable negative differential resistance (NDR), with a gate-coupling efficiency of η ≃ 0.5 and a peak-to-valley ratio of ∼ 3 down to 150 K. By employing density functional theory, we determine that the observed NDR is dominated by valence band-to-valence band tunneling, while additional interband tunneling contributions arise at higher bias. The combination of tunneling driven transport and gate controllability of NDR opens the pathway for realizing gate-tunable 2D material-based neuromorphic and energy-efficient electronics.
Författare
Richa Mitra
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
Konstantina Iordanidou
SINTEF
Chalmers, Fysik, Kondenserad materie- och materialteori
Naveen Shetty
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
Anamul Md Hoque
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
Anushree Datta
Université Paris-Saclay
Laboratoire Matériaux et Phénomènes Quantiques
Alexei Kalaboukhov
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
Julia Wiktor
Chalmers, Fysik, Kondenserad materie- och materialteori
Sergey Kubatkin
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
Saroj Prasad Dash
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
S. Lara-Avila
National Physical Laboratory (NPL)
Scientific Reports
2045-2322 (ISSN) 20452322 (eISSN)
Vol. 16 1 26526Ämneskategorier (SSIF 2025)
Annan elektroteknik och elektronik
Den kondenserade materiens fysik
DOI
10.1038/s41598-026-68365-1