Effect of high-k dielectric and ionic liquid gate on nanolayer black-phosphorus field effect transistors
Artikel i vetenskaplig tidskrift, 2015

Nanolayer black phosphorus (BP) is a direct bandgap semiconducting two dimensional crystal, showing immense promise for future nanoelectronic devices. Here, we report the effect of high-k dielectric and ionic-liquid gate in BP field effect transistors (BP FET). An ambipolar behavior is observed in pristine BP FETs with current modulation of 104. With a high-k HfO2 encapsulation, we observed identical switching performance in the BP FETs, however, with noticeable enhancement in mobility at room temperature. In comparison to the pristine device, the HfO2 encapsulation showed a contrasting decrease in mobility at lower temperatures. BP FETs with electric double layer ionic liquid gate showed a drastic improvement in the subthreshold swing (SS) to 173mV/dec and operation voltages less than 0.5V in comparison to solid state SiO2 back gated devices. Our results elucidate the effect of different electrostatic conditions on BP transistor channels and open up ways for further exploration of their prospects for nanoelectronic devices and circuits.

Författare

Venkata Kamalakar Mutta

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

B. N. Madhushankar

Chalmers, Mikroteknologi och nanovetenskap (MC2)

André Dankert

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Saroj Prasad Dash

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Applied Physics Letters

0003-6951 (ISSN) 1077-3118 (eISSN)

Vol. 107 11 113103- 113103

Styrkeområden

Nanovetenskap och nanoteknik

Materialvetenskap

Ämneskategorier

Fysik

Elektroteknik och elektronik

Nanoteknik

Fundament

Grundläggande vetenskaper

DOI

10.1063/1.4930236

Mer information

Skapat

2017-10-07