Silicon spintronics with ferromagnetic tunnel devices
Artikel i vetenskaplig tidskrift, 2012

In silicon spintronics, the unique qualities of ferromagnetic materials are combined with those of silicon, aiming at creating an alternative, energy-efficient information technology in which digital data are represented by the orientation of the electron spin. Here we review the cornerstones of silicon spintronics, namely the creation, detection and manipulation of spin polarization in silicon. Ferromagnetic tunnel contacts are the key elements and provide a robust and viable approach to induce and probe spins in silicon, at room temperature. We describe the basic physics of spin tunneling into silicon, the spin-transport devices, the materials aspects and engineering of the magnetic tunnel contacts, and discuss important quantities such as the magnitude of the spin accumulation and the spin lifetime in the silicon. We highlight key experimental achievements and recent progress in the development of a spin-based information technology.

electrical spin-injection

spintronics

metal

resonance

fm/si/fm junction

semiconductor

metal/tunnel barrier contact

room-temperature

conduction

transistor

doped silicon

Författare

R. Jansen

National Institute of Advanced Industrial Science and Technology

Saroj Prasad Dash

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

S. Sharma

National Institute of Advanced Industrial Science and Technology

Rijksuniversiteit Groningen

B. C. Min

Korea Institute of Science and Technology

Semiconductor Science and Technology

0268-1242 (ISSN) 1361-6641 (eISSN)

Vol. 27

Ämneskategorier

Fysik

DOI

10.1088/0268-1242/27/8/083001