Low Schottky Barrier Black Phosphorus Field-Effect Devices with Ferromagnetic Tunnel Contacts
Artikel i vetenskaplig tidskrift, 2015

Black phosphorus (BP) has been recently unveiled as a promising 2D direct bandgap semiconducting material. Here, ambipolar field-effect transistor behavior of nanolayers of BP with ferromagnetic tunnel contacts is reported. Using TiO2/Co contacts, a reduced Schottky barrier <50 meV, which can be tuned further by the gate voltage, is obtained. Eminently, a good transistor performance is achieved in the devices discussed here, with drain current modulation of four to six orders of magnitude and a mobility of μh ≈ 155 cm2 V−1 s−1 for hole conduction at room temperature. Magnetoresistance calculations using a spin diffusion model reveal that the source–drain contact resistances in the BP device can be tuned by gate voltage to an optimal range for injection and detection of spin-polarized holes. The results of the study demonstrate the prospect of BP nanolayers for efficient nanoelectronic and spintronic devices.

Författare

Venkata Kamalakar Mutta

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

B. N. Madhushankar

Chalmers, Mikroteknologi och nanovetenskap (MC2)

André Dankert

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Saroj Prasad Dash

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Small

1613-6810 (ISSN) 1613-6829 (eISSN)

Vol. 11 18 2209-2216

Styrkeområden

Nanovetenskap och nanoteknik

Energi

Materialvetenskap

Ämneskategorier

Nanoteknik

DOI

10.1002/smll.201402900

Mer information

Skapat

2017-10-07