Spin-Polarized Tunneling through Chemical Vapor Deposited Multilayer Molybdenum Disulfide
Artikel i vetenskaplig tidskrift, 2017
The two-dimensional (2D) semiconductor molybdenum disulfide (MoS2) has attracted widespread attention for its extraordinary electrical-, optical-, spin-, and valley-related properties. Here, we report on spin-polarized tunneling through chemical vapor deposited multilayer MoS2 (∼7 nm) at room temperature in a vertically fabricated spin-valve device. A tunnel magnetoresistance (TMR) of 0.5–2% has been observed, corresponding to spin polarization of 5–10% in the measured temperature range of 300–75 K. First-principles calculations for ideal junctions result in a TMR up to 8% and a spin polarization of 26%. The detailed measurements at different temperature, bias voltages, and density functional theory calculations provide information about spin transport mechanisms in vertical multilayer MoS2 spin-valve devices. These findings form a platform for exploring spin functionalities in 2D semiconductors and understanding the basic phenomena that control their performance.
density functional theory
spin-polarized tunneling
2D semiconductor
multilayer MoS2
tunnel magnetoresistance
Författare
André Dankert
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
Parham Pashaei
Chalmers, Mikroteknologi och nanovetenskap
Venkata Kamalakar Mutta
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
A.P.S. Gaur
University of Puerto Rico
Iowa State University
S. Sahoo
University of Puerto Rico
Institute of Physics Bhubaneswar
I. Rungger
National Physical Laboratory (NPL)
A. Narayan
Eidgenössische Technische Hochschule Zürich (ETH)
Trinity College Dublin
K. Dolui
University of Delaware
Trinity College Dublin
Anamul Md Hoque
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
R.S. Patel
Birla Institute of Technology and Science Pilani
M.P. De Jong
MESA Institute for Nanotechnology
R.S. Katiyar
University of Puerto Rico
S. Sanvito
Trinity College Dublin
Saroj Prasad Dash
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
ACS Nano
1936-0851 (ISSN) 1936-086X (eISSN)
Vol. 11 6 6389-6395Graphene-Based Revolutions in ICT And Beyond (Graphene Flagship)
Europeiska kommissionen (EU) (EC/FP7/604391), 2013-10-01 -- 2016-03-31.
Styrkeområden
Nanovetenskap och nanoteknik
Materialvetenskap
Fundament
Grundläggande vetenskaper
Ämneskategorier
Nanoteknik
Den kondenserade materiens fysik
Infrastruktur
Chalmers materialanalyslaboratorium
Nanotekniklaboratoriet
DOI
10.1021/acsnano.7b02819